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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 25 (1981), S. 95-103 
    ISSN: 1432-0630
    Keywords: 74.70.Dg ; 74.60.-w ; 73.60.Ka
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O2 during the film deposition was raised up to 1×10−4 Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O2-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofT c due to the oxygen. The strongest increase ofT c (up to 8%) was observed in the O2-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityj c we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofj c due to the O2-treatment which must be interpreted in terms of bulk pinning.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 299-308 
    ISSN: 1057-9257
    Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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