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Investigations onNb/Al-AlO x -Al/Nb proximity tunneling junctions for X-ray detection (1993)

Zhao, S. P. ; Finkbeiner, F. ; Lerch, Ph. ; [et al.]

Springer

Journal of low temperature physics 93 (1993), S. 641-645

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ISSN: 1573-7357

Keywords: 74.50.+r ; 29.40.-n ; 29.40.Wk

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract A new Nb/Al-AlOx-Al/Nb trilayer process using a movable mechanical slit for junction-detector applications is described. Best junctions have a quality factor of 42 mV with a Josephson current density of 1200 A/cm 2 at 4.2 K. The temperature dependence of the sub-gap current in the range of 0.45 to 4.2 K has been measured. Deviations from the thermally activated behavior due to imperfections in the tunneling barrier are observed. We compare our simple method with the usual whole wafer processes and we discuss the influence of proximity effects in these junctions in terms of the models proposed by Golubov et al. and by McMillan.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00693489

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