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  • 1
    Electronic Resource
    Electronic Resource
    The physiological and nutritional importance of dietary fibre (1991)
    Springer
    Cellular and molecular life sciences 47 (1991), S. 181-186 
    Details
    ISSN: 1420-9071
    Keywords: Dietary fibre ; nutrition ; review ; health ; cholesterol ; minerals ; fermentation ; gastrointestinal tract ; cancer
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Fibrous material is an integral part of the daily diet, and it exerts direct physiological effects throughout the gastrointestinal tract, in addition to affecting metabolic activities more indirectly. The interplay of these effects is responsible for the presumed desirable influence of fibre on weight regulation, carbohydrate and lipid metabolism, and on colon function. Numerous mechanisms of action have been identified which are related to the type and the physicochemical nature of the fibre. This review concentrates mainly on the serum cholesterol-lowering effect of dietary fibre, its colonic fermentation, and finally on some possible adverse effects that one should be aware of when consuming high amounts of dietary fibre.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01945423
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  • 2
    Electronic Resource
    Electronic Resource
    Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0〈x〈0.5) (1991)
    Springer
    Applied physics 53 (1991), S. 109-113 
    Details
    ISSN: 1432-0630
    Keywords: 6855 ; 7280E ; 7340L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Modulation doped Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with a constant In x Ga1−x As quantum well width was investigated as a function of InAs mole fraction. If the In x Ga1−x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided δ-doped structures was obtained for the structures with δ-doping on both sides of the In x Ga1−x As quantum well. Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 μm a f T of 115 GHz was measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323868
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