ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Astrophysics  (2)
  • 7340L  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0〈x〈0.5) (1991)
    Springer
    Applied physics 53 (1991), S. 109-113 
    Details
    ISSN: 1432-0630
    Keywords: 6855 ; 7280E ; 7340L
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Modulation doped Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with a constant In x Ga1−x As quantum well width was investigated as a function of InAs mole fraction. If the In x Ga1−x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided δ-doped structures was obtained for the structures with δ-doping on both sides of the In x Ga1−x As quantum well. Al0.3Ga0.7As/In x Ga1−x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 μm a f T of 115 GHz was measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323868
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    facet.materialart.
    Unknown
    Characterization of the Optical and X-ray Properties of the Northwestern Wisps in the Crab Nebula (2013)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: We have studied the wisps to the northwest of the Crab pulsar as part of a multi-wavelength campaign in the visible and in X-rays. Optical observations were obtained using the Nordic Optical Telescope in La Palma and X-ray observations were made with the Chandra X-ray Observatory. The observing campaign took place from October 2010 until September 2012. About once per year we observe wisps forming and peeling off from (or near) the region commonly associated with the termination shock of the pulsar wind. We find that the exact locations of the northwestern wisps in the optical and in X-rays are similar but not coincident, with X-ray wisps preferentially located closer to the pulsar. This suggests that the optical and X-ray wisps are not produced by the same particle distribution. It is also interesting to note that the optical and radio wisps are also separated from each other (Bietenholz et al. 2004). Our measurements and their implications are interpreted in terms of a Doppler-boosted ring model that has its origin in MHD modeling. While the Doppler boosting factors inferred from the X-ray wisps are consistent with current MHD simulations of PWNe, the optical boosting factors are not, and typically exceed values from MHD simulations by about a factor of 4.
    Keywords: Astrophysics
    Type: M13-2546 , 13th Meeting of the High Energy Astrophysical Division; Apr 07, 2013 - Apr 12, 2013; Monterey, CA; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Characterization of the Optical and X-ray Properties of the Northwestern Wisps in the Crab Nebula (2013)
    In:  CASI
    Details
    Publication Date: 2019-07-19
    Description: We have studied the variability of the Crab Nebula both in the visible and in X -rays. Optical observations were obtained using the Nordic Optical Telescope in La Palma and X -ray observations were made with the Chandra X -Ray Observatory. We observe wisps forming and peeling off from the region commonly associated with the termination shock of the pulsar wind. We measure a number of properties of the wisps to the Northwest of the pulsar. We find that the exact locations of the wisps in the optical and in X-rays are similar but not coincident, with the X-ray wisp preferentially located closer to the pulsar. Our measurements and their implications are interpreted in terms of a MHD model. We find that the optical wisps are more strongly Doppler boosted than X-ray wisps, a result inconsistent with current MHD simulations. Indeed the inferred optical boosting factors exceed MHD simulation values by about one order of magnitude. These findings suggest that the optical and X-ray wisps are not produced by the same particle distribution, a result which is consistent with the spatial differences. Further, the X -ray wisps and optical wisps are apparently developing independently from each other, but every time a new X ]ray wisp is born so is an optical wisp, thus pointing to a possible common cause or trigger. Finally, we find that the typical wisp formation rate is approximately once per year, interestingly at about the same rate of production of the large gamma-ray flares.
    Keywords: Astrophysics
    Type: M13-2392 , High Energy Astrophysics Division 2013 Meeting; Apr 07, 2013 - Apr 11, 2013; Monterey, CA; United States
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...