ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 73.60.Fw  (4)
Collection
Keywords
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    The effects of arsenic source contamination on doped GaAs grown by MBE (1984)
    Springer
    Applied physics 35 (1984), S. 75-77 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 81.15.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The presence of parts per million (ppm) levels of impurities in the low-temperature arsenic charge used in molecular beam epitaxy (MBE) is shown to have a dramatic effect on the quality of GaAs grown. Source charge impurities play a vital role in determining the apparent variation in reported doping behaviour in MBE:GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620633
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition (1985)
    Springer
    Applied physics 37 (1985), S. 145-151 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.60.Fw ; 82.65−i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar+ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617499
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Oxygen and monatomic hydrogen interactions with PbTe film surfaces prepared by molecular-beam deposition (1986)
    Springer
    Applied physics 40 (1986), S. 7-12 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 61.70.Tm ; 82.65-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects on the electrical properties and surface composition of molecular-beam-deposited PbTe films to exposure by oxygen and monatomic hydrogen were investigated. Three stages of oxidation have been identified, depending on the pressure regime employed. Characteristic differences in the response of each of the three oxides to thermal annealing, electron irradiation during Auger analysis and to monatomic hydrogen exposure were observed. The kinetics of n-type doping by monatomic hydrogen, and its reversibility under ultra-high vacuum and oxygen-exposure conditions are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616585
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Coevaporation phosphorus doping in Si grown by molecular beam epitaxy (1986)
    Springer
    Applied physics 41 (1986), S. 233-235 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 81.15Ef ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of “potential enhanced doping” indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616844
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...