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Electrical characteristics of laser-annealed silicon diodes (1987)

Martinez, J. ; Fogarassy, E. ; Mesli, A. ; [et al.]

Springer

Applied physics 42 (1987), S. 273-277

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ISSN: 1432-0630

Keywords: 73.40-L

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Electrical measurements, performed on As-implanted and laser-annealed silicon diodes, have shown poorI–V characteristics with high values of the recombination current and anomalous C-V characteristics. This behavior is attributed to the existence of defects, created during the ion-implantation process, that can not been annealed by the laser treatment. A best improve in the electrical characteristics is obtained after a post-laser annealing in furnace at 600 °C, however the defects are not completely removed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00616562

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