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  • Astronomy  (3)
  • STRUCTURAL MECHANICS  (3)
  • 72.80N  (2)
  • 1
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    In:  CASI
    Publication Date: 2016-06-07
    Description: Apollo project - progress and national benefits
    Keywords: STRUCTURAL MECHANICS
    Type: Proceedings of the Fourth National Conference on the Peaceful Uses of Space; NASA-SP-51
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  • 2
    Publication Date: 2019-06-27
    Description: Structural mechanics of deformation and fracture - responses of model viscoelastic materials to impact
    Keywords: STRUCTURAL MECHANICS
    Type: NASA-CR-80918
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  • 3
    Publication Date: 2019-07-13
    Description: Space-based gravitational wave detectors are conceived to detect gravitational waves in the low frequency range by measuring the distance between proof masses in spacecraft separated by millions of kilometers. One of the key elements is the telescope which has to have a dimensional stability better than 1 pm Hz(exp 1/2) at 3 mHz. In addition, the telescope structure must be light, strong, and stiff. For this reason a potential telescope structure consisting of a silicon carbide quadpod has been designed, constructed, and tested. We present dimensional stability results meeting the requirements at room temperature. Results at 60 C are also shown although the requirements are not met due to temperature fluctuations in the setup.
    Keywords: Astronomy
    Type: GSFC-E-DAA-TN9929 , Review of Scientific Instruments; 83; 11; 116107
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  • 4
    Publication Date: 2019-06-27
    Description: Mechanical behavior of materials with temperature dependent viscosity, using electric analogy on nonlinear Maxwell model
    Keywords: STRUCTURAL MECHANICS
    Type: ; ACE(
    Format: text
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  • 5
    Publication Date: 2019-08-02
    Description: The Laser Interferometer Space Antenna (LISA), requires high precision displacement measurement between widely spaced pairs of freely floating test masses. We describe a proposed design for the optical telescopes that form an essential part of the laser heterodyne interferometry measurement system and discuss how the design and implementation will address the unique challenges of this specialized application.
    Keywords: Astronomy
    Type: GSFC-E-DAA-TN71660 , Eduardo Amaldi Conference on Gravitational Waves; Jul 07, 2019 - Jul 12, 2019; Valencia; Spain|International Conference on General Relativity and Gravitation; Jul 07, 2019 - Jul 12, 2019; Valencia; Spain
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  • 6
    Publication Date: 2019-07-13
    Description: Space-based gravitational wave (GW) detectors are conceived to detect GWs in the low frequency range (mili-Hertz) by measuring the distance between free-falling proof masses in spacecraft (SC) separated by 5 Gm. The reference in the last decade has been the joint ESA-NASA mission LISA. One of the key elements of LISA is the telescope since it simultaneously gathers the light coming from the far SC (approximately or equal to 100 pW) and expands, collimates and sends the outgoing beam (2 W) to the far SC. Demanding requirements have been imposed on the telescope structure: the dimensional stability of the telescope must be approximately or equal to 1pm Hz(exp1/2) at 3 mHz and the distance between the primary and the secondary mirrors must change by less than 2.5 micrometer over the mission lifetime to prevent defocussing. In addition the telescope structure must be light, strong and stiff. For this reason a potential on-axis telescope structure for LISA consisting of a silicon carbide (SiC) quadpod structure has been designed, constructed and tested. The coefficient of thermal expansion (CTE) in the LISA expected temperature range has been measured with a 1% accuracy which allows us to predict the shrinkage/expansion of the telescope due to temperature changes, and pico-meter dimensional stability has been measured at room temperature and at the expected operating temperature for the LISA telescope (around -6[deg]C). This work is supported by NASA Grants NNX10AJ38G and NX11AO26G,
    Keywords: Astronomy
    Type: GSFC-E-DAA-TN7725 , American Astronautical Society (AAS) Meeting; Jun 06, 2013 - Jun 10, 2013; Long Beach, CA; United States
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 45 (1988), S. 41-51 
    ISSN: 1432-0630
    Keywords: 66.3L ; 68.60 ; 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that, through the diffusive re-arrangement of Si-H bonds, the a-Si∶H lattice is able to establish thermal equilibrium between the densities of band tail trapped charge carriers and dangling bond defects. When this equilibrium is disturbed by changes in temperature, carrier injection or illumination, dangling bond defects have to be generated or annealed out via H-diffusion processes. Based on the concept of charge-induced bond breaking, we develop a mathematical formalism for the diffusive re-arrangement of Si-H bonds and show that our formalism can account for a variety of observations that have been made in the context of defect-generation and annealing experiments.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 41 (1986), S. 253-258 
    ISSN: 1432-0630
    Keywords: 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We compare the electronic properties of gas-phase and implantation doped a-Si:H films and analyze their properties within the framework of Street's auto-compensation model [1]. We find that this model can consistently explain the varying degrees of sensitivity with respect to doping for differently prepared a-Si:H materials. In agreement with sub-band-gap absorption data our analysis indicates that the density of native dangling bond defects is increased when the film thickness is decreased and when thin films are further subjected to ion bombardment. Considering the temperature dependence of conductivity, we find that the auto-compensation model can provide an explanation for the high-temperature kink in the conductivity of doped a-Si:H films but that it fails to account for the experimentally observed universality of the “Meyer-Neldel-rule” behaviour of the conductivity prefactor in differently prepared and doped a-Si:H films.
    Type of Medium: Electronic Resource
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