ISSN:
1432-0630
Keywords:
72.20 Jv
;
78.50 Ge
;
72.80 Ng
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The relaxation of photoexcited carriers in a-Si and a-GaAs has been studied with subpicosecond time resolution by excite-and-probe experiments. The measured time dependence of the induced reflectivity and absorption reveals that the initial trapping of mobile carriers in high-defect-density materials occurs on a subpicosecond time scale.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00614761
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