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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 63-68 
    ISSN: 1432-0630
    Keywords: 72.40 ; 73 ; 85 ; 60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties ofn +-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn +-layer thickness, $$d_{n^ + } $$ , by measuring firstly the activation energyE a of the dark conductivity and secondly the built-in potentialV bi of the cells.E a was found to increase with decreasing $$d_{n^ + } $$ attaining values as high as 0.8 eV for $$d_{n^ + } $$ ≅5nm; bulk values, e.g.E a ≅. 2eV in the amorphous andE a〈0.01 eV in the microcrystalline case, were only observed for $$d_{n^ + } $$ 〉20nm and for $$d_{n^ + } $$ 〉200nm, respectively. In contrast,V bi did not depend on $$d_{n^ + } $$ at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn + andp +-material. As a consequenceE a in very thin films can no longer be considered as a measure of (E C −E F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE a and theV bi results can be resolved by assuming that the deposition of then +-material proceeds via the growth and coalescence of small islands.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Excess charge carrier kinetics in moderately doped pSi wafers were investigated with a contactless transient photoconductivity method, i.e. the time-resolved microwave conductivity (TRMC) method. The surface structure of the wafers was changed by etching and polishing, the volume structure by irradiation with high-energy electrons. Comparison of the photoconductivity decay after excitation by strongly absorbed light and by weakly absorbed light was used to distinguish between surface and volume decay processes. The experimental results deviate from predictions based on a linear surface decay rate. These results are discussed and suggestions are made for the use of transient photoconductivity measurements to characterize semiconductor wafers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 49 (1989), S. 165-169 
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.40 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
    Type of Medium: Electronic Resource
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