ISSN:
1432-0630
Keywords:
42.60
;
72.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A simple theory is presented for the laser-induced damage in semiconductors in the range of low irradiation intensities. This theory avoids the solution of coupled differential equations, and takes into account characteristic physical properties of semiconductors—i.e. energy gap, carrier lifetime, and surface recombination velocity. The deduced equations permit us to estimate the damage threshold, or the minimum irradiation time required for damage to occur. Comparison is made with some experimental results reported in the literature and a reasonable agreement is found.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00900065
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