ISSN:
1432-0630
Keywords:
71.55
;
72.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00886040
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