ISSN:
1432-0630
Keywords:
72.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00614754
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