ISSN:
1090-6487
Keywords:
71.35.Cc
;
78.66.Fd
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Lines corresponding to localized excitonic states formed from “above-barrier” electron and/or hole states (specifically, excitation lines of excitons formed by an electron localized in a QW and a free heavy hole) have been observed in the photoluminescence excitation spectra of GaAs/Al0.05Ga0.95As structures with quantum wells (QWs), each containing one single-particle size-quantization level for charge carriers of each type. A computational method is proposed that permits finding the binding energy and wave functions of excitons in QWs taking the Coulomb potential into account self-consistently. The computed values of the excitonic transition energies agree quite well with the experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568225
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