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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 47 (1988), S. 373-376 
    ISSN: 1432-0630
    Keywords: 78.55.Ds ; 71.35 ; 81.60.Bn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Beveled cross-sections of semiconductors with inclination angles down to 0.25 min of arc have been produced with a special ion beam etching process. We applied this technique to the depth resolved characterization of GaAs/GaAlAs multiple quantum well structures by photoluminescence spectroscopy. The depth dependent incorporation of impurities during the growth of the first quantum well layers is clearly revealed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 47 (1988), S. 373-376 
    ISSN: 1432-0630
    Keywords: 78.55.Ds ; 71.35 ; 81.60.Bn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Beveled cross-sections of semiconductors with inclination angles down to 0.25 min of arc have been produced with a special ion beam etching process. We applied this technique to the depth resolved characterization of GaAs/GaAlAs multiple quantum well structures by photoluminescence spectroscopy. The depth dependent incorporation of impurities during the growth of the first quantum well layers is clearly revealed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
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