ISSN:
1432-0630
Keywords:
78.55.Ds
;
71.35
;
81.60.Bn
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Beveled cross-sections of semiconductors with inclination angles down to 0.25 min of arc have been produced with a special ion beam etching process. We applied this technique to the depth resolved characterization of GaAs/GaAlAs multiple quantum well structures by photoluminescence spectroscopy. The depth dependent incorporation of impurities during the growth of the first quantum well layers is clearly revealed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615501
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