ISSN:
1090-6487
Keywords:
71.30.+h
;
73.40.Qv
;
73.50.Jt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The weak-field Hall voltage in Si-MOS structures with different mobility is studied on both sides of the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage is found to deviate by 6–20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity ρ xx (T). In particular, the smallest deviation in R xy is found in the highest-mobility sample, which exhibits the largest variation in the diagonal resistivity ρ xx with temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568128
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