ISSN:
1432-0630
Keywords:
71.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The parameters of the gold donor level inp-type silicon are determined from the temperature dependence of the free carrier concentration and from DLTS measurements. The entropy-factorX T is determined to be 20±2. In addition, the capture cross-section for holes σ p =5.5×10−15 cm2 and the reaction enthalpyH T −H v =0.35eV for the exchange of holes between the gold donor level and the valence band are obtained in the present investigation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617573
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