ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 68.55  (2)
  • Springer  (2)
  • American Physical Society (APS)
  • 1985-1989  (2)
Collection
Keywords
Publisher
  • Springer  (2)
  • American Physical Society (APS)
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE) (1985)
    Springer
    Applied physics 36 (1985), S. 147-151 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract H2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1−x As as sulphur vector forn-type doping. Doping efficiencies are less than 10−3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1−x As forx≧0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624935
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Silicon migration during MBE growth of doped (A1, Ga)As films (1986)
    Springer
    Applied physics 41 (1986), S. 237-241 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 66.30J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616845
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...