ISSN:
1432-0630
Keywords:
61.14
;
68.48
;
68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Incoherent Z-contrast imaging uses a high-angle annular detector to collect only highly local, incoherently generated scattering with the result that images become dependent on intensities, not phases. No model structures are required for a first-order structure determination, and the images remain intuitively interpretable even at interfaces. Under suitable conditions, incoherently generated inelastic scattering may be collected simultaneously with a large-aperture axial spectrometer, and, by using the Z-contrast image to locate the scanning transmission electron microscope (STEM) probe over selected atomic columns, can provide an atomic-resolution chemical analysis. This is demonstrated with reference to an epitaxial CoSi2/Si(100) interface, achieving a 2.7 Å spatial resolution. Recent insights into the growth and relaxation of strained Si-Ge epitaxial films are described, highlighting the role of stress concentrations, and contrasting the case of a free surface with that of a surface constrained by an oxide layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331776
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