Electronic Resource
Springer
The European physical journal
97 (1995), S. 413-424
ISSN:
1434-6036
Keywords:
66.70.+f
;
63.20.Dj
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The phonon-focusing patterns of ballistic phonons in InAs are measured in the frequency range 0.1 to 1 THz, in an effort to test the global validity of lattice dynamics models for this semiconductor. Phonon caustic patterns depend sensitively on the shapes of constant frequency surfaces. Several tunnel-junction detectors with sensitivity onsets in this frequency range are used to measure dispersive shifts in the phonon caustics. The measured caustic positions are compared to those predicted by rigid-ion and bond-charge models. Similar to the case of InSb studied by Hebboul and Wolfe, a 6-parameter bond-charge model (BCM)-with force constants determined by neutron, X-ray, and Raman scattering-reproduces the phonon-imaging data both qualitatively and quantitatively. Comparisons of the focusing patterns with an 11-parameter rigid-ion model (RIM) do not show good agreement. New structures are predicted in the phononfocusing patterns at frequencies above about 1.2 THz — presently outside our experimental range-which are highly sensitive to the theoretical modeling.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01317224
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