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  • 61.70Tm  (1)
  • 61.80.Jh.  (1)
  • 64.75+g  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 27 (1982), S. 19-29 
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 61.70.Wp ; 61.80.Jh.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deuterons of 10 keV energy and protons with the same mean projected range have been implanted into several metals at a temperature of approximately 35 K and at dose rates of approximately 2 × 1014 cm−2 s−1. The amount of retained deuterium saturates at fluences larger than roughly 2 × 1018 cm−2. After implantation of deuterons and subsequent bombardment with protons, the deuteron depth profiles show characteristic double peak structures, which indicate a replacement process. The experimental data are in good agreement with a simple model of local saturation and mixing. The possible implications of this model are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 141-145 
    ISSN: 1432-0630
    Keywords: 61.80Jh ; 61.70Tm ; 64.75+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing by 500-keV xenon ions has been studied in targets consisting of 2000-Å films of aluminium on a polycrystalline aluminium substrate, onto which has been evaporated a 500-Å overlayer of copper. Both long- and short-range-mixing processes have been identified, by RBS analysis of the irradiated targets, as a deep copper tail in the aluminium and interfacial broadening, respectively. The long-range component varies linearly with xenon fluence, is temperature-independent in the interval 40–500 K, and is not influenced by the presence of an interfacial oxide layer between the copper and aluminium layers. The number of long-range-mixed atoms is in agreement with theoretical estimates of the recoil mixing. The short-range mixing, which is the dominating process, has a squareroot dependence on xenon fluence and is independent of temperature between 40 and 300 K, increasing rapidly at higher temperatures. The broadening attributed to the short-range mixing is explained by interstitial diffusion within the cascade. For small xenon fluences, interfacial oxide layers inhibited both short-range mixing and thermal diffusion. Higher xenon fiuences subdued the inhibition.
    Type of Medium: Electronic Resource
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