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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 46 (1988), S. 305-312 
    ISSN: 1432-0630
    Keywords: 61.80 Fe ; 66.30 Lw ; 79.20 Kz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering of the solid rare gas Ar by 0.8–3.0 keV electrons was studied experimentally and theoretically. The argon films were deposited on a quartz-crystal microbalance kept at liquid-helium temperature. The yield was determined from the mass loss during irradiation. The absolute yield shows a significant dependence on film thickness in accordance with earlier measurements on electronic sputtering of solid argon. The yield shows a maximum of about 3.0±0.4 Ar/elec. at 1.5 keV. The thickness dependence reflects the mobility of electronic excitations created by the primary electrons. The data analysis is based on a theoretical treatment for the diffusive motion of these excitations. From the thickness as well as the energy dependence of the yield we may derive a characteristic diffusion length for the excitations of 200–300 Å.
    Type of Medium: Electronic Resource
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