ISSN:
1432-0630
Keywords:
61.70
;
61.80
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract In (100)p-Si radiation damage was produced by implanting B+ ions with an energy of 80keV, 90keV and 1.6MeV. The specimens were annealed by scanned electronbeam irradiation (20keV, 1–2mAcm−2). The formation, evolution and annihilation of defects during the irradiation process were investigated by employing DLTS and RBS measuring techniques. The results show a minimum of defect concentration and an efficiency of the electrical activation of B higher than 80% at an annealing time of 4.5 s. For irradiation times longer than 5 s it becomes evident, that the crystal surface acts as source of defects and contributes to an increase in defect concentration.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00614667
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