ISSN:
1432-0630
Keywords:
61.70
;
61.80
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The effects of single-pulse ruby laser irradiation have been investigated in Si samples with disorder layers located at a depth of 2000 Å from the crystal surface and extending up to 8000 Å. This disorder was obtained by implantation with 350 keV N+ to a fluence of 2×1016/cm2. Channeling, diffraction and transmission electron microscopy were used to characterize the structure of the irradiated layers. After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline. At a higher energy density all the material undergoes the transition to single crystal. Calculations based on the liquid model accounts in part for the experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00895009
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