ISSN:
1090-6487
Keywords:
61.72.Tt
;
72.40.+w
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=1016−6×1016 cm−3, ionization energy ε1≃45 meV) with compensation K=10−4−10−5 in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω〉16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D − band, which is filled with carriers under the influence of the field E. In fields E〈E q (E q ≃100–200 V/cm) the carrier motion consists of hops along localized D − states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε1); for E〉E q carriers drift along localized D − states with energy ε∞ε1−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.567462
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