ISSN:
1432-0630
Schlagwort(e):
61.70T
;
61.70E
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: atE c -0.21 eV,E c -0.39 eV,E c -0.52 eV andE c -0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450–800°C of these traps is described.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00885514
Permalink
