ISSN:
1432-0630
Schlagwort(e):
68.55.−a
;
61.14.Hg
;
82.65.Dp
;
61.50.Cj
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract We show that surface stoichiometry and growth mode are intimately related for heteroepitaxy of InAs on GaO0.47In0.53As. Under As-stable conditions during molecular beam epitaxy, the high strain of the InAs film induces a morphological phase-transition from layer-by-layer to island nucleation. In contrast, under In-stable conditions without direct As4 flux, islanding is inhibited. The In-stabilized surface imposes limitations to the migration of both As and In adatoms and forces layer-by-layer nucleation, thus acting as a virtual surfactant.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00351909
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