ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Sorting

Electronic Resource

Laser induced single-crystal transition in polycrystalline silicon (1978)

Vitali, G. ; Bertolotti, M. ; Foti, G. ; [et al.]

Springer

Applied physics 17 (1978), S. 111-113

add to mindlist on the mindlist

Details

ISSN: 1432-0630

Keywords: 61.80.x ; 68.20.-s ; 61.16.-d ; 42.50.Qm

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 Å thick polycrystalline layer is about 70 MW/cm2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm2.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00885039

Permalink

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit