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  • 21.60.Cs  (4)
  • Ion implantation  (2)
  • (Human plasma protein)  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Protein Structure and Molecular 994 (1989), S. 195-199 
    ISSN: 0167-4838
    Keywords: (Human plasma protein) ; Disulfide bond ; α"2HS-glycoprotein
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 336 (1990), S. 5-26 
    ISSN: 1434-601X
    Keywords: 21.60.Cs ; 21.60.Jz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown how the spurious components due to the center of mass motion can be eliminated from general Hartree-Fock-Bogoliubov quasi-particle configurations with the help of projection techniques. The problem how to restore the additional symmetries being broken by such configurations is discussed. An explicit formulation is given for the spherical Hartree-Fock problem with center of mass momentum projection before the variation. As an example for the application of this method the ground state of4He is studied using two different interactions, a microscopic two-body one as well as a phenomenological one including a Skyrme-type three-body force. The results are compared to those of the usual approximate treatment of the center of mass motion in Hartree-Fock calculations. It turns out that, at least for the chosen example, the latter yields a rather reasonable approximation to the correct total energy, single particle energy and even the mass density provided that it is calculated from a translationally invariant density operator.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 337 (1990), S. 267-281 
    ISSN: 1434-601X
    Keywords: 21.60.Cs ; 21.60.Jz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An expression is derived for the translationally invariant (transition-) charge density in the center of mass rest frame of the nucleus in between arbitrary wave functions. An explicit formulation is given for the charge density of spherically symmetric Hartree-Fock type ground states. The method is applied to the nuclei4He,16O,40Ca and90Zr using Woods-Saxon single nucleon orbits for the construction of the ground state wave functions. For the two lighter nuclei in addition realistic Hartree-Fock wave functions are investigated. The results are compared to those obtained with various approximate treatments of the center of mass motion. It turns out that at least in the lighter nuclei the usual center of mass correction, which is based on the assumption of pure non-spurious oscillator configurations and commonly used in the analysis of, e.g., electron scattering data, does not produce reliable (or even predictable) results. Thus here indeed the full translationally invariant treatment seems to be required. For the heavy nucleus90Zr on the other hand, as expected, the center of mass effects become negligibly small.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1434-601X
    Keywords: 21.60.Cs ; 21.60.Jz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Microscopic nuclear structure wave functions obtained within the EXCITED FED VAMPIR approach are used to calculate the charge densities for the ground states as well as the transition charge densities for the transitions from the ground to the first and second 2+ states in some doubly even Ge isotopes. The results are compared with the data extracted from elastic and inelastic electron scattering experiments. Except for the heavier isotopes, where the calculations fail to yield enough collectivity, rather nice agreement is obtained. This result strongly supports the theoretically predicted shape coexisting structures in the low spin states of the nuclei in this mass region.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 347 (1993), S. 87-92 
    ISSN: 1434-601X
    Keywords: 21.60.Cs ; 21.60.Jz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The scalar part of the two-body density is calculated for the20Ne ground band and for the yrast 2+ state in68Ge as obtained by solving the Hartree-Fock-Bogoliubov problem with symmetry-projection before the variation. The nucleon pair structure of these states is analysed and the results obtained with different effective Hamiltonians are compared.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 3 (1974), S. 321-324 
    ISSN: 1432-0630
    Keywords: Ion implantation ; Profiles ; Damage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The important role of damage dependent electrical activation in the case of boron implanted silicon layers is whown by comparing measured acceptor concentration profiles in differently amorphized silicon layers. It is shown that the amorphous layer is completely recrystallized after a 650° C anneal for 10 min and the implanted boron is electrically active. In the heavily damaged but not amorphous region underneath the amorphous layer the implanted boron is hardly electrically active after this temperature treatment. At higher annealing temperatures the electrical activity increases, but 900° C are required for complete activation of the implanted boron. These results indicate that the process to activate the implanted boron electrically is strongly damage dependent. We thus found a new contribution to the understanding of the annealing behavior of implanted layers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 4 (1974), S. 115-123 
    ISSN: 1432-0630
    Keywords: Ion implantation ; Backscattering ; Profiles
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of doping concentration and mobility of arsenic implanted silicon at high energies and at low energies with following drive-in diffusion are presented. The electrical measurements are compared with and supported by backscattering measurements. Tails which are present after short time anneals vanish during drive-in diffusion. A temperature of at least 825°C is required to fully activate the arsenic and to obtain the same mobility as in diffused samples. Backscattering data reveal an anomaly in the annealing behavior of the damage. After prolonged annealing As shows some accumulation at the surface. For drive-in diffusions lattice location experiments were performed.
    Type of Medium: Electronic Resource
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