ISSN:
1432-0630
Keywords:
61.70
;
17.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Electrically active deep levels related to zinc in silicon are investigated in n- and p-type silicon using Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. While in n-type silicon a level at E C−0.49 eV is observed, the main zinc-related levels in p-type silicon are determined to be E V+0.27 eV and E V+0.60 eV. The latter are associated with zinc situated on regular silicon lattice sites. The emission rate of these centers exhibits a field dependence which cannot be quantitatively explained with the Poole-Frenkel model. On the other hand, a shallow level at E V+0.09 eV is observed only in boron-doped silicon which may be related to a zinc-boron complex. Other zinc-related levels are found at E V+0.23 eV and E V+0.33 eV, their concentration depending on that of zinc on substitutional sites. In addition, the evaluation of depth profiles and the analysis of the field dependence of the emission rate based on the DLTFS method is presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00343410
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