ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 05.70 Ln  (1)
  • 12.80. Ng  (1)
  • Springer  (2)
  • Oxford University Press
Collection
Keywords
Publisher
  • Springer  (2)
  • Oxford University Press
Years
  • 1
    Electronic Resource
    Electronic Resource
    A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon (1986)
    Springer
    Applied physics 39 (1986), S. 243-250 
    Details
    ISSN: 1432-0630
    Keywords: 12.80. Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We propose that during deposition of a-Si:H films a chemical equilibrium is established that relates the density of dangling-bond defects near mid-gap to the densities of electrons and holes in the conduction and valence band states. We develop the appropriate chemical reaction formalism and show that our model allows doping, compensation and photo-induced degradation to be treated within a single and unifying approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617268
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Surface impedance of epitaxial YBCO thin films — Comparison of experimental data with a d-wave theory of superconductivity (1996)
    Springer
    Journal of low temperature physics 105 (1996), S. 503-508 
    Details
    ISSN: 1573-7357
    Keywords: 05.70 Ln ; 05.70 Jk ; 64
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The surface impedance of two 350nm thick YBCO films was measured for temperatures between 4.2K and 150K in a copper cavity at 87 GHz. Both films, one grown by electron beam evaporation on MgO, the other one by high oxygen-pressure dc sputtering from a stoichiometric target on LaAlO3, provide critical temperatures of about 91K, low residual surface resistances of Rs(4.2K) 〈 1mΩ and low specific resistivities in the normal state of ϱ(100K) 〈 85μΩcm. The experimental data obtained on these two films are compared to a d-wave model of superconductivity which incorporates elastic and inelastic scattering. Good agreement between theory and the experimental results for both the surface resistance and the penetration depth in the whole temperature range is achieved for scattering phase shifts near 0.4π and order parameter amplitudes in the range of 2Δ0(0)/kBTc = 6.0 – 7.5 without subtracting an extrinsic residual surface resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00768435
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...