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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 58 (1994), S. 329-341 
    ISSN: 1432-0630
    Keywords: 07.60 ; 42.70 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on the development of antenna-coupled thin-film nanometer Ni-NiO-Ni diodes which are used to detect 10.6 μm CO2-laser radiation. The Ni-NiO-Ni diodes have a minimum contact area of 0.056 μm2. This is smaller than those of any previously fabricated thin-film Metal-metalOxide-Metal (MOM) diodes. By measuring the second derivative of the dc current-voltage characteristics I(V), we demonstrate that the nonlinearity of the dc I(V) characteristics of our Ni-NiO-Ni diodes is larger than that of the dc I(V) characteristics of thin-film MOM diodes fabricated before by other authors. It is comparable to the nonlinearity of the dc I(V) characteristics of point-contact MOM diodes. Furthermore, we show that the polarisation-dependent infrared response of the Ni-NiO-Ni diodes is due to antenna coupling and that the polarisation-independent response is mainly of thermal origin. Consequently, the heating of the Ni-NiO-Ni diodes is due to the absorption of the incident CO2-laser radiation in the SiO2, and dissipation of the laser-induced ac antenna currents in the antenna.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 58 (1994), S. 87-95 
    ISSN: 1432-0649
    Keywords: 07.60 ; 42.70 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report on the experimental study of infrared nanostrip dipole antennas which are connected to thin-film nanometer Ni-NiO-Ni diodes. The integrated Ni-NiO-Ni diodes are used to detect 30 THz (≈10 µm) CO2-laser radiation. The diodes are deposited on 385 µm silicon substrates which are covered with a layer of 1.6 µm SiO2 on both sides. We have found that in low-power applications 1.6 µm of SiO2 yields excellent quarter-wave matching layers for wavelengths centered at ⋋0 = 10.8 µm. By this method 79% of the incident CO2-laser radiation is transmitted into the Si substrate compared to 48% without SiO2 layer. The use of SiO2 quarter-wave matching layers considerably improves the efficiency of infrared nanostrip dipole antennas. This has been confirmed by the study of the laser-induced response of the Ni-NiO-Ni diode detectors as a function of the lengthL of the dipole antenna. Thus, we have observed that the laser-induced response strongly increases for shorter antennas and exhibits a distinct maximum atL=2.8 ± 0.3 µm. For the first time, we have investigated the 30 THz radiation patterns of nanostrip dipole antennas of different lengths. On this occasion, we have observed that the radiation pattern changes when the lengthL of the dipole antenna is varied. This observation indicates that antenna currents propagate on the nanostrip dipole antenna.
    Type of Medium: Electronic Resource
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