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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (3)
  • *Cell Polarity  (1)
  • 1
    Publication Date: 2012-03-30
    Description: During tissue morphogenesis, simple epithelial sheets undergo folding to form complex structures. The prevailing model underlying epithelial folding involves cell shape changes driven by myosin-dependent apical constriction. Here we describe an alternative mechanism that requires differential positioning of adherens junctions controlled by modulation of epithelial apical-basal polarity. Using live embryo imaging, we show that before the initiation of dorsal transverse folds during Drosophila gastrulation, adherens junctions shift basally in the initiating cells, but maintain their original subapical positioning in the neighbouring cells. Junctional positioning in the dorsal epithelium depends on the polarity proteins Bazooka and Par-1. In particular, the basal shift that occurs in the initiating cells is associated with a progressive decrease in Par-1 levels. We show that uniform reduction of the activity of Bazooka or Par-1 results in uniform apical or lateral positioning of junctions and in each case dorsal fold initiation is abolished. In addition, an increase in the Bazooka/Par-1 ratio causes formation of ectopic dorsal folds. The basal shift of junctions not only alters the apical shape of the initiating cells, but also forces the lateral membrane of the adjacent cells to bend towards the initiating cells, thereby facilitating tissue deformation. Our data thus establish a direct link between modification of epithelial polarity and initiation of epithelial folding.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3597240/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3597240/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Wang, Yu-Chiun -- Khan, Zia -- Kaschube, Matthias -- Wieschaus, Eric F -- 5R37HD15587/HD/NICHD NIH HHS/ -- P50 GM071508/GM/NIGMS NIH HHS/ -- R37 HD015587/HD/NICHD NIH HHS/ -- Howard Hughes Medical Institute/ -- England -- Nature. 2012 Mar 28;484(7394):390-3. doi: 10.1038/nature10938.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Biology, Princeton University, Princeton, New Jersey 08544, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/22456706" target="_blank"〉PubMed〈/a〉
    Keywords: Adherens Junctions/*physiology/ultrastructure ; Animals ; *Cell Polarity ; Cell Shape ; Choristoma ; Drosophila Proteins/deficiency/genetics/metabolism ; Drosophila melanogaster/*cytology/*embryology/genetics/metabolism ; Epithelial Cells/*cytology/metabolism/ultrastructure ; Epithelium/*embryology/metabolism/ultrastructure ; Gastrula/cytology/embryology/metabolism/ultrastructure ; Gastrulation/*physiology ; Glycogen Synthase Kinase 3 ; Intracellular Signaling Peptides and Proteins/deficiency/genetics/metabolism ; Protein-Serine-Threonine Kinases/metabolism
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
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    In:  Other Sources
    Publication Date: 2019-06-27
    Description: In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid-State Electronics; 22; Dec. 197
    Format: text
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  • 3
    Publication Date: 2019-06-27
    Description: Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; Aug. 197
    Format: text
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  • 4
    Publication Date: 2019-06-27
    Description: The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; July 197
    Format: text
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