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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 3 (1974), S. 321-324 
    ISSN: 1432-0630
    Keywords: Ion implantation ; Profiles ; Damage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The important role of damage dependent electrical activation in the case of boron implanted silicon layers is whown by comparing measured acceptor concentration profiles in differently amorphized silicon layers. It is shown that the amorphous layer is completely recrystallized after a 650° C anneal for 10 min and the implanted boron is electrically active. In the heavily damaged but not amorphous region underneath the amorphous layer the implanted boron is hardly electrically active after this temperature treatment. At higher annealing temperatures the electrical activity increases, but 900° C are required for complete activation of the implanted boron. These results indicate that the process to activate the implanted boron electrically is strongly damage dependent. We thus found a new contribution to the understanding of the annealing behavior of implanted layers.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: Ion implantation ; Backscattering ; Profiles
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of doping concentration and mobility of arsenic implanted silicon at high energies and at low energies with following drive-in diffusion are presented. The electrical measurements are compared with and supported by backscattering measurements. Tails which are present after short time anneals vanish during drive-in diffusion. A temperature of at least 825°C is required to fully activate the arsenic and to obtain the same mobility as in diffused samples. Backscattering data reveal an anomaly in the annealing behavior of the damage. After prolonged annealing As shows some accumulation at the surface. For drive-in diffusions lattice location experiments were performed.
    Type of Medium: Electronic Resource
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