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  • Electronics and Electrical Engineering  (5)
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  • 1
    Publication Date: 2018-06-08
    Description: In this paper, we address the needs of the FIR space-flight community, providing an introductory-level treatment of the common heterodyne receiver configurations and the state of technology for various front-end components.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Ultrasonics and Feurolectrics 2000 Symposium; Kansas City, MO; United States
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  • 2
    Publication Date: 2018-06-08
    Keywords: Electronics and Electrical Engineering
    Type: 12th International Symposium on Space Terahertz Technology; San Diego, CA; United States
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  • 3
    Publication Date: 2018-06-08
    Keywords: Electronics and Electrical Engineering
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  • 4
    Publication Date: 2019-07-18
    Description: Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 233; JPL-Publ-01-18
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  • 5
    Publication Date: 2019-07-18
    Description: The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields 〈 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 91; JPL-Publ-01-18
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