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  • STRUCTURAL MECHANICS  (3)
  • 72.80N  (2)
  • 1
    ISSN: 1432-0630
    Keywords: 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We compare the electronic properties of gas-phase and implantation doped a-Si:H films and analyze their properties within the framework of Street's auto-compensation model [1]. We find that this model can consistently explain the varying degrees of sensitivity with respect to doping for differently prepared a-Si:H materials. In agreement with sub-band-gap absorption data our analysis indicates that the density of native dangling bond defects is increased when the film thickness is decreased and when thin films are further subjected to ion bombardment. Considering the temperature dependence of conductivity, we find that the auto-compensation model can provide an explanation for the high-temperature kink in the conductivity of doped a-Si:H films but that it fails to account for the experimentally observed universality of the “Meyer-Neldel-rule” behaviour of the conductivity prefactor in differently prepared and doped a-Si:H films.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 66.3L ; 68.60 ; 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We show that, through the diffusive re-arrangement of Si-H bonds, the a-Si∶H lattice is able to establish thermal equilibrium between the densities of band tail trapped charge carriers and dangling bond defects. When this equilibrium is disturbed by changes in temperature, carrier injection or illumination, dangling bond defects have to be generated or annealed out via H-diffusion processes. Based on the concept of charge-induced bond breaking, we develop a mathematical formalism for the diffusive re-arrangement of Si-H bonds and show that our formalism can account for a variety of observations that have been made in the context of defect-generation and annealing experiments.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2019-06-27
    Description: Mechanical behavior of materials with temperature dependent viscosity, using electric analogy on nonlinear Maxwell model
    Keywords: STRUCTURAL MECHANICS
    Type: ; ACE(
    Format: text
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  • 4
    Publication Date: 2019-06-27
    Description: Structural mechanics of deformation and fracture - responses of model viscoelastic materials to impact
    Keywords: STRUCTURAL MECHANICS
    Type: NASA-CR-80918
    Format: application/pdf
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  • 5
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    In:  CASI
    Publication Date: 2016-06-07
    Description: Apollo project - progress and national benefits
    Keywords: STRUCTURAL MECHANICS
    Type: Proceedings of the Fourth National Conference on the Peaceful Uses of Space; NASA-SP-51
    Format: application/pdf
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