ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Depth profile analysis by SIMS (secondary ion mass spectrometry), XPS (x-ray photoelectron spectroscopy) and AES (Auger electron spectroscopy) have been performed on copper-implanted monocrystalline silicon and zinc-implamented polycrystalline copper under various ion sputtering conditions. A comparison of the different composition profiles shows an important influence of the ion sputtering parameters and of the analysis method on the apparent distribution of the implanted impurities.The results can be interpreted in terms of variations of the surface or subsurface composition during sputtering, taking into account preferential sputtering and/or sputter-induced segregation phenomena. An unexpected improvement of ionization yields owing to contaminating oxygen may also induce artefactal modifications during the transitory sputtering period. The analysis of sputtered matter (SIMS) under O2 sputtering appears to be the most reliable analysis method, although the results, even in that case, can be altered by segregation phenomena.A comparison of the sputtered matter and the surface analysis method leads to the experimental determination of differential sputtering ratios for both systems.
Additional Material:
6 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740180308
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