Publication Date:
2014-09-18
Description:
The lead-free, low-softening point ZnO-Bi 2 O 3 -B 2 O 3 glass with low permittivity, low loss and small coefficient of thermal expansion was prepared by melt-quenching method. ZnO-Bi 2 O 3 -B 2 O 3 glass + Al 2 O 3 system were prepared below 850°C by the conventional ceramic route. Sintering behavior and microstructure of this system were investigated using X-ray diffraction, differential scanning calorimetry, and scanning electron microscopic techniques. Results revealed that ZnO-Bi 2 O 3 -B 2 O 3 glass and Al 2 O 3 reacted during the firing process, which led to the formation of ZnAl 2 O 4 . Glass concentration needed to be 65 wt% for better densification. The dense system sintered at 825°C for 30 min exhibited good dielectric properties: small permittivity of 5.73 and low loss tangent of 8.94 × 10 −4 at 1 MHz. Its coefficient of thermal expansion (5.57 × 10 −6 /K) well matched to that of GaAs chip (5.6 × 10 −6 /K). The bending strength was also characterized (129.9 MPa). The prepared system was suitable for LTCC application.
Print ISSN:
1546-542X
Electronic ISSN:
1744-7402
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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