Publication Date:
2015-03-20
Description:
Article Current methods for depositing large-area, high-mobility graphene films are complicated by multiple processing steps and high temperatures. Here, the authors demonstrate a plasma chemistry that quickly produces high-mobility graphene on copper in a single step, at reduced temperatures (〈420 °C). Nature Communications doi: 10.1038/ncomms7620 Authors: D.A. Boyd, W.-H. Lin, C.-C. Hsu, M.L. Teague, C.-C. Chen, Y.-Y. Lo, W.-Y. Chan, W.-B. Su, T.-C. Cheng, C.-S. Chang, C.-I. Wu, N.-C. Yeh
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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