ISSN:
1573-4854
Schlagwort(e):
porous silicon
;
infrared spectroscopy
;
oxidation
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
Notizen:
Abstract The Si–Si vibrational states near the surface region of porous silicon has been characterized using Fourier Transform Infrared Spectroscopy (FTIR) due to its enlarged surface area. By means of anodic etch and oxidization experiments, two Si–Si vibration modes of porous silicon have been identified as near the surface regions and in the bulk, respectively. The intensity of absorption peak at 620 cm−1, which originates from the Si–Si bonds vibrations on the surface and near surface regions of porous silicon, is found to vary depending on the length of etch and degree of oxidation of porous silicon, which exists before etching and is recovered again after fully oxidation. The peak of 610 cm−1 doesn't change throughout the oxidation experiment, and to be assigned for Si–Si bond vibrations in the bulk. With an extra irradiation of Nd:Yag laser on the PS sample the Raman and FTIR spectra reveal a red shift. These results can give an interpretation to explain the different phenomenon of Si–Si vibrations of Raman and FTIR spectroscopy.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1009622601723
Permalink
