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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of the interdiffusion in Au-Al layers by RBS (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 59-63 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The non-destructive standardless nuclear analysis technique Rutherford Backscattering Spectroscopy (RBS) is used to study interdiffusion phenomena in aluminium and gold layers with a high depth resolution, e.g., at the interfaces. A multilayered system consisting of alternate aluminium and gold layers was deposited under high vacuum conditions on polished glassy carbon and single-crystalline silicon substrates to investigate the interdiffusion of gold and aluminium in as-deposited layers. The characteristic peaks of gold and aluminium are in background-free regions of the RBS spectra if the layers are sufficiently thin and substrates like silicon with a low Z are used. The RBS results indicate that the Au-Al interdiffusion behaviour in as-deposited layers strongly depend on the conditions during deposition in the evaporation chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050345
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular ion implantation in silicon (1997)
    Springer
    Microchimica acta 125 (1997), S. 313-316 
    Details
    ISSN: 1436-5073
    Keywords: molecular ion implantation ; silicon nitride layers ; resonant nuclear reaction analysis ; non-Rutherford RBS ; nitrogen depth profile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract 15N2 + molecular ions were implanted with 10keV (j=10 μA/cm2) under high vacuum conditions close to room temperature in 〈100〉 silicon (c-Si) to study the13N depth distributions, particularly the dependence of peak concentration and dose on the ion fluence. The analysis were performed by the resonant nuclear reaction15N(p, αγ)12C(NRA). A maximum peak concentration of 65 at.% was measured. Thin stoichiometric silicon nitride layers with a thickness of approx. 20 nm (15 at.% nitrogen at the specimen surface) were produced by this low-energy implantation of15N2 + ions with an ion fluence of 1.5·1017 ions/cm2. NRA analysis of 38 keV15N2 + and 19keV15N+ ion implantations were performed to compare the15N depth distributions. No significant changes in the depth distributions are measured, that means, the molecular15N2 + ions are already disintegrated passing the very first atomic layers of the sample during implantation. Non-Rutherford RBS with4He+ ions and 3.45 MeV was performed in order to confirm the results obtained by NRA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01246204
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation (1997)
    Springer
    Microchimica acta 125 (1997), S. 337-341 
    Details
    ISSN: 1436-5073
    Keywords: ion implantation ; silicon nitride layers ; TEM analysis ; resonant nuclear reaction analysis ; nitrogen depth profile
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Thin silicon nitride (SiN x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 keV15N 2 + in 〈100〉 silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 °C for 15 s, ramping up and down 5 °C/s) and NRA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01246208
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA) (1994)
    Springer
    Applied physics 59 (1994), S. 435-439 
    Details
    ISSN: 1432-0630
    Keywords: 34.00 ; 61.16 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 15N 2 + ions were implanted into c-Si with an energy of 5 keV/atom and fluences ranging from 5×1016 to 2×1017 atoms/cm2 at RT to form ultrathin silicon-nitride layers (SiN x ) with different N/Si ratios depending on the fluences (up to an overstoichiometric N/Si ratio of 1.65). The 15N depth distributions were analysed by the resonant nuclear reaction 15N(p, αγ)12C(E res=429 keV). The implanted samples were processed by Electron Beam Rapid Thermal Annealing (EB-RTA) at 1150° C for 15 s (ramping up and down 5° C/s). The chemical structure of the 15N implantation into Si was investigated by EXAFS and NEXAFS. Channeling-RBS (4He+, E 0=1.5 MeV) measurements were performed to observe the transition region (disordered-Si layer, d-Si) being underneath of the SiN x layer (typical values of layer thicknesses:SiN x 24 nm, d-Si 6 nm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331725
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  • 5
    Electronic Resource
    Electronic Resource
    The concept for processing and dissemination of ERS-1 SAR data to be acquired by a German station in Antarctica (1991)
    Springer
    GeoJournal 24 (1991), S. 119-124 
    Details
    ISSN: 1572-9893
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geography
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00213063
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  • 6
    Electronic Resource
    Electronic Resource
    Characterisation of 13C implantations in silicon by NRA [13C(p,γ)14N] and RBS (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 483-486 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract SiCx layers close to the surface have been produced by implanting 40 keV 13C ions into silicon with a fluence of 6 × 1017 at./cm2 (j = 12 μA/cm2) at room temperature (RT). Depth distributions and areal densities (doses) of the implanted carbon have been analysed by the nuclear reaction 13C(p,γ)14N (NRA) which shows a sharp resonance in the excitation function at a proton energy of 1748 keV (G = 75 eV FWHM). The depth resolution at the surface amounts to 31 nm due to energy spread of the proton beam (1.2 keV FWHM) and resonance width. The surface resolution of the NRA can be increased up to 8 nm when tilting the sample (surface normal) to an angle of 75° with respect to the proton beam direction. Using a NaI detector the detection limit of 13C in silicon is approximately 1 at.%. Comparative elastic backscattering measurements with 4He+ projectiles were performed at 2 MeV (Rutherford backscattering spectroscopy, RBS) and 3.45 MeV (high energy backscattering, HEBS) at a backscattering angle of 171°. The measured 13C depth distributions have been compared with a distribution calculated by the Monte Carlo algorithm T-DYN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530483
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  • 7
    Electronic Resource
    Electronic Resource
    Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 403-407 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The molecular ions O 2 + and NO+ are implanted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00322078
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  • 8
    Electronic Resource
    Electronic Resource
    Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 403-407 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The molecular ions O+ 2 and NO+ are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s0021653530403
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  • 9
    Electronic Resource
    Electronic Resource
    Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM (1995)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 734-739 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Homogeneous ultra thin silicon nitride layers (SiNx layers) close to the surface have been produced by 10 keV 15N 2 + molecular ion implantation and an ion current density of 10 μA/cm2, into single crystal silicon at room temperature. Stoichiometric SiNx layers with thicknesses of about 28 nm (analyzed by NRA) were obtained at fluences of 1.5×1017 at/cm2. NRA analyses of samples annealed by EB-RTA at T=1150° C for 15 s indicated that the N/Si ratio and the layer thickness did not change drastically. FT IR ellipsometry analyses indicated the existence of Si3N4 bonds in as-implanted specimens. A disordered Si layer (d-Si, typically 15 nm thick) underneath the implantation region caused by the ion implantation was found by channeling RBS analyses. The d-Si layer partly recrystallized during EB-RTA showing a thickness of 6 nm afterwards. The SiNx layers showed no decomposition and detachment after EB-RTA. Due to EB-RTA, however, the smooth surface of the as-implanted specimens changed into a surface with remaining whisker-like structures surrounded by circular recesses as shown by AFM analyses. A model for the growth of these whisker-liker structures caused by low energy ion implantation and EB-RTA is presented on the basis of the thickness of the SiNx layer, the existence of the d-Si layer and the special annealing process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00321360
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  • 10
    Electronic Resource
    Electronic Resource
    Characterisation of thin sputtered silicon nitride films by NRA, ERDA, RBS and SEM (1993)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 346 (1993), S. 177-180 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary Thin, amorphous silicon nitride (a-SINx) films were deposited on n-type (100) silicon substrates using an argon ion beam for sputtering a HPSN block under high vacuum conditions. The substrates were kept at room temperature. Nitrogen depth distributions were determined by NRA using the resonance reaction 15N(p,αγ)12C at 429 keV. Hydrogen profiles were analysed by NRA (1H(15N,αγ)12C at Eo=6.385 MeV) and by ERDA (20Ne2+, Eo=10 MeV). The NRA was used to determine the depth distributions (concentration vs. areal density) of nitrogen and hydrogen taking calibration standards into consideration. The silicon depth distributions and the N/Si ratios of the deposited a-SiNx films were determined by RBS (4He+, Eo=2.0 MeV). Film thicknesses were obtained by SEM. The density of the deposited a-SiNx films was found to be ϱ=2.7 (±0.1) g/cm3 by correlating RBS data and real film thicknesses as obtained by SEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00321408
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