ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The crystallization of thin amorphous TaOx films formed by d.c. reactive sputtering was investigated at temperatures from 500–700 °C. The films remained amorphous for times up to 100 h at 500 °C. The formation of discrete, single crystallites of the orthorhombic β-Ta2O5 phase was observed after annealing at 600 °C for times from 8–108 h. The crystallites were 0.35 μm×0.35 μm after 8 h and grew to approximately 2.5 μm×2.0 μm after 108 h. A (2 0 0) fibre texture with a 6° spread was observed. More rapid in-plane growth in the [0 1 0] direction resulted in a near-rectangular shape and is attributed to a ledge growth mechanism. Higher temperature anneals at 650 and 700 °C produced less-textured polycrystalline films with remnant amorphous regions. © 1998 Kluwer Academic Publishers
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004484915386
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