ISSN:
1432-0630
Keywords:
61.70.Tm
;
66.30.Jt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be enhanced during the early stage of annealing in comparison with results reported for conventional furnace tempering [1]. An influence of a low temperature preannealing on the diffusion behaviour of arsenic has not been observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324465
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