ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies (1993)
    Springer
    Electrical engineering 77 (1993), S. 15-19 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Die Leistungsfähigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem Ätzen wurden eingesetzt, um Bauelemente auf einer Diamant- bzw. integrierten Wärmesenke herzustellen. Hochfrequenzausgangsleistungen von 20 mW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden für das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen für das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUNNETT-Dioden für das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und über 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement.
    Notes: Contents The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical de to RF conversion efficiencies range from 0.9% up to over 4.0%. In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01574916
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    On the overestimation of the flow turbulence due to fringe distortion in LDA measurement volumes (1998)
    Springer
    Experiments in fluids 25 (1998), S. 371-374 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  Fringe distortion with linear longitudinal variation in fringe spacing over the length of LDA measurement volume has been considered to influence the accuracy of flow measurement. The overestimation of the mean velocity and especially of the flow turbulence due to fringe distortion has been derived to be a function both of the fringe distortion number (which is a purely geometrical parameter of the measurement volume) and the flow turbulence to be measured. Against the usual expectation, it has been shown that the overestimation of the flow turbulence due to fringe distortion in the measurement volume could be neglected. Only for very low turbulence intensity dose the error become significant. As a reference this result could be used to estimate measurement errors which occur in the presence of other types of fringe distortion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003480050243
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ozone cleaning of the Si-SiO2 system (1987)
    Springer
    Applied physics 43 (1987), S. 223-226 
    Details
    ISSN: 1432-0630
    Keywords: 81.60.-j
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The cleaning of monocrystalline silicon substrates and thin thermally grown SiO2 layers on silicon by electrochemically produced ozone has been investigated. In both cases organics are removed very effectively. In comparison with other dry cleaning methods no radiation damage occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615981
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE (1995)
    Springer
    Applied physics 61 (1995), S. 71-74 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500 °C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700 °C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200 °C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538214
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    On a third-order phase transition (1983)
    Springer
    Communications in mathematical physics 90 (1983), S. 125-159 
    Details
    ISSN: 1432-0916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Notes: Abstract The asymptotic behaviour of random variables of the general form $$\ln \sum\limits_{i = 1}^{\kappa ^N } {\exp (N^{1/p} \beta \zeta _i )} $$ with independent identically distributed random variables ζ i is studied. This generalizes the random energy model of Derrida. In the limitN→∞, there occurs a particular kind of phase transition, which does not incorporate a bifurcation phenomenon or symmetry breaking. The hypergeometric character of the problem (see definitions of Sect. 4), its Φ-function, and its entropy function are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01209390
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Silicon nanoelectronic devices with delta-doped layers (1995)
    Springer
    Journal of materials science 6 (1995), S. 336-340 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Electronic devices grown by molecular beam epitaxy on a nanometer scale are presented. The use of a vertical device design in combination with delta-doping layers increases the performance of these devices. The vertical design offers the possibility of three dimensional device integration and allows the scaling of MOS field effect transistors down to its physical limits. The excellent crystal quality and doping profile is demonstrated by the very good performance of the grown devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00125889
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Sechs-, sieben- und neungliedrige Cyclosilazane mit C und O als weiteren Ringgliedern Beiträge zur Chemie der Silicium-Stickstoff-Verbindungen, 148. Mitt (1978)
    Springer
    Monatshefte für Chemie 109 (1978), S. 1059-1065 
    Details
    ISSN: 1434-4475
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00913008
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Disilatetraza-spiro[3.4]octane und Disilahexaza-dispiro[4.1.4.1]dodecane Beiträge zur Chemie der Silicium-Stickstoff-Verbindungen, 149. Mitt. (1978)
    Springer
    Monatshefte für Chemie 109 (1978), S. 1267-1275 
    Details
    ISSN: 1434-4475
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Synthesis of the spirane systemsB andC (scheme 1) was achieved for the first time, starting with bis(alkylamino)substituted 1,3-diaza-2-sila-cyclopentanesA, via reactions 1–3. Properties, analytical and structural data of the new compoundsA 1–5, B 1–5 andC 2 are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00906038
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Dimensions of poly(styrene) in the vicinity of the theta point (1983)
    Springer
    Polymer bulletin 10 (1983), S. 182-186 
    Details
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary The decrease of the mean-square radius of gyration of a high molecular weight polystyrene dissolved in cyclohexane with decrease of temperatures to far below Θ was observed by conventional light scattering techniques. The experiments were performed in the region of the coil-globule transition of the polymeric chain. The transition was reversible upon repeated heating and cooling of the sample. Aggregation occured at temperatures below the sharp decrease of the polymer dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00275854
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Possible violation of the δS=δQ selection rule in leptonic decays of σ+-hyperons (1967)
    Springer
    The European physical journal 205 (1967), S. 409-419 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have found a possible example of the rare decayσ + →nΜ + Ν, which violatesδS=δQ. The positive decay track of theσ + comes to rest in the hydrogen bubble chamber and decays into ane +. This track has all the characteristics of a stoppingΜ +. The decay neutron fortuitously scatters twice, producing two recoil protons. The only other possible interpretation of the event isσ +→nγ(π + →Μ + Ν), where theπ + →Μ + Ν decay produces no deflection (θ〈0.1 rad) and no significant change in curvature. Using thep-wave radiative decay predictions ofBarshay et al. we calculate that the integrated branching ratio for such “accidental” events isγ(σ + →nγ(π + →Μ stop + Ν))/γ(σ + →nπ +)=1.6×10−6. Most of the contribution to this “accidental” branching ratio comes from radiative decays where theπ + mesons have ranges less than 1 mm (p π〈20 MeV/c). If one excludes thoseΜ's with ranges less than 1.2 cm the above “accidental” branching ratio becomes 5.5×10−7. With this figure we estimate that we should have seen 6.5×10−2 events of this type thusfar in our experiment. The neutron momentum does not help in deciding between the two hypotheses. We therefore assign a confidence level of 7% for the radiative hypothesis. For the leptonic hypothesis we obtain an estimate of the branching ratio,γ(σ + →nΜ + Ν)/γ(σ + →nπ +)=5×10−5. If one further accepts theσ + →nπ + Ν event reported byBarbaro-Galtieri et al. and theσ + →ne + Ν event reported byNauenberg et al., one obtains theδS=−δQ leptonic branching ratio [γ(σ + →nΜ + Ν)+γ(σ + →ne + Ν)]/γ(σ + →nπ +)=(4±3)×10−5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01325596
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...