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  • 1
    Electronic Resource
    Electronic Resource
    Highly ordered monoclinic K-feldspars from Haut Boréon anatexites, Argentera Massif, Maritime Alps (1982)
    Springer
    Mineralogy and petrology 29 (1982), S. 241-253 
    Details
    ISSN: 1438-1168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Description / Table of Contents: Zusammenfassung In den mikroperthitischen Alkalifeldspäten der Anatexite des Haut Boréon im Argentera Massiv (Seealpen) zeigen die vorherrschenden monoklinen Phasen keine Zwillingsgitterung, aber gewöhnlich schwach unregelmäßige Auslöschung. Sie bestehen aus monoklinem Kali-feldspat, der 1, durch eine weitgehend geordnete Si,Al-Verteilung auf denT-Positionen, 2. durch schwache aber systematische Spannungen, welche durch die Kohärenz mit der entmischten Na-reichen Phase verursacht sind, und 3, durch eine nicht sehr scharfe Zusammensetzung, die von 0,85 bis 0,88 Molenbruch KAlSi3O8 schwankt, charakterisiert ist. Schwache trikline Maxima in den Röntgen-Pulverdiagrammen sowie der Hinweis auf beginnende M-Verzwilligung und diagonale Assoziation in Röntgen-Einkristallaufnahmen weisen darauf hin, daß die vorherrschenden monoklinen Phasen partiell in triklines Material umgewandelt wurden. Die untersuchten Mikroperthite scheinen eine relativ rasche thermische Geschichte zu widerspiegeln, die bei höheren Temperaturen begann und endete als jene, welche die westlich des Haut Boréon aufgeschlossenen Anatexite des Mt. Pélago erlitten.
    Notes: Summary In microperthitic alkali feldspars from the Haut Boréon anatexites in the Argentera Massif, Maritime Alps, the dominant K-rich phases are devoid of grid twinning but usually show weak uneven extinction. They consist of monoclinic forms characterized by (a) highly ordered Si,Al distributions in theT-sites, (b) weak but systematic residual strain due to coherency with the exsolved Na-rich phase, and (c) not very pure compositions ranging from 0.85 to 0.88 mole fraction KAlSi3O8. Weak triclinic peaks in X-ray powder patterns and the evidence of incipient formation of M-twinning and the diagonal association in single-crystal X-ray photographs indicate that the dominant monoclinic K-rich phases have undergone a partial transformation into triclinic material. The microperthites investigated appear to be the expression of a relatively rapid thermal history which started and terminated at temperatures higher than those experienced by the microperthites from the Mt. Pélago anatexites, which are exposed to the West of the Haut Boréon anatexites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01091795
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  • 2
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    Highly ordered monoclinic K-feldspars from Haut Bor�on anatexites, Argentera Massif, Maritime Alps (1982)
    Springer
    Details
    Publication Date: 1982-01-01
    Print ISSN: 0041-3763
    Electronic ISSN: 1438-1168
    Topics: Geosciences
    Published by Springer
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition (1988)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 57-69 
    Details
    ISSN: 0392-6737
    Keywords: Thin-film growth ; structure and epitaxy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Films di solfuro di cadmio sono stati cresciuti su substrati di tellururo di cadmio, mediante la tecnica della deposizione chimica da fase vapore in tubo aperto. La crescita è stata realizzata in un reattore di tipo orizzontale, usando come sorgente grani policristallini di CdS e idrogeno come agente trasportatore. Le temperature della zona sorgente e della zona substrato sono state variate nell'intervallo (700÷900)°C e (400÷800)°C, rispettivamente. I valori sperimentali della velocità di crescita sono stati paragonati a quelli calcolati assumendo un modello di crescita in condizioni di quasi equilibrio. Il confronto mostra che il processo di crescita può essere adeguatamente descritto da tale modello in un piccolo intervallo di temperatura attorno a 700°C. A temperature inferiori o superiori le cinetiche superficiali limitano la crescita. I films cresciuti a 700°C mostrano inoltre la migliore morfologia. Misure di diffrazione X e di fotoluminescenza evidenziano inoltre che i films cresciuti in queste condizioni hanno una buona qualità strutturale.
    Abstract: Резюме Метод химического напыления в открытой тпубке испольэуется для выращивания эпитаксиальных CdS пленок на CdTe подложках. Выращивание проиэводится в гориэонтальном реакторе, испольэуя поликристаллический CdS в качестве материала источника и водород, как транспортный гаэ. Температуры эоны источника и эоны подложки иэменяются соответсвенно в интервалаш (700÷900)°C и (400÷800)°C. Экспериментальные значения напыления сравниваются с вычисленными значениями, предполагая квази-равновесныю модель. Сравнение показывает, что выращивания мжет быть адекватно описан с помощью такой модели в небодьшой области температур вблиэи 700°C. При меньших и больших температурах поверхностная кинетика ограничивает процесс роста. Пленки, выращенные при 700°C, также овнаруживает наилучшую морфологию. Иэмерения рентгеновской дифракции и фотолюминиесценции подтверждают, что пленки, выращенные в этих условиях, имеУт высокое качество структуры.
    Notes: Summary The open-tube chemical vapour deposition has been used to grow epitaxial CdS films on CdTe substrates. The growth has been performed in a horizontal reactor, using polycristalline CdS as source material and hydrogen as transporting gas. The deposition and the source temperatures have been varied in the range (400÷800)°C and (700÷900)°C, respectively. The experimental values of the deposition rate have been compared with those calculated assuming a quasi-equilibrium model. The comparison shows that the growth process can be adequately described by such a model in a small-temperature region around 700°C. At lower or higher temperatures the surface kinetics becomes the limiting mechanism. Films grown at 700°C show also the best morphology. X-ray diffraction and photoluminescence measurements evidence that films grown in these conditions have a good structural quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450089
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  • 4
    Electronic Resource
    Electronic Resource
    Convergent-beam electron diffraction analysis of GaSe crystals grown from the melt by different doping elements (1991)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 233-245 
    Details
    ISSN: 0392-6737
    Keywords: Specific structure of inorganic compounds
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A systematic investigation of the structural modifications of GaSe crystals, grown from the melt by different doping elements, has been performed by convergent-beam electron diffraction technique, in order to analyse the dependence of the structure on the doping atoms. Iodine-doped crystals have shown the ɛ-2H hexagonal and γ-3R rhombohedral polytypes. The structure of crystals doped either by silver, or copper, or cadmium, or zinc, or arsenic has been proved a mixture of the ɛ-2H hexagonal and of γ, 9 R, 12 R, 15 R rhombohedral phases. Ingots doped either by zinc or arsenic have shown the ɛ polytype prevailing in some zones and the γ structure in the other ones. The ɛ modification is dominant in ingots doped by the remaining atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02463999
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  • 5
    Electronic Resource
    Electronic Resource
    Convergent-beam electron diffraction study of melt-and vapour-grown single crystals of gallium chalcogenides (1989)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 1145-1163 
    Details
    ISSN: 0392-6737
    Keywords: Electron determination of structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stato effettuato uno studio dettagliato delle modificazioni strutturali presenti in monocristalli di GaS e GaSe, utilizzando la tecnica della diffrazione elettronica a fasci convergenti. Sono stati analizzati cristalli cresciuti sia dal fuso con il metodo Bridgman-Stockbarger, sia da fase vapore per trasporto chimico assistito da iodio. I risultati delle osservazioni hanno mostrato che la struttura del GaSe dipende fortemente dal metodo di crescita, mentre questo non si verifica per il GaS. Infatti, i cristalli cresciuti dal fuso, sia di GaS che di GaSe, sono costituiti solo dal politipo esagonale β con gruppo spazialeP63/mmc, la cui presenza è stata confermata dall'osservazione del centro di simmetria caratteristico di tale struttura. I cristalli di GaS cresciuti da fase vapore sono costituiti dal politipo esagonale β, mentre queli di GaSe sono costituiti dalla sovrapposizione del politipo esagonale ε, avente gruppo spaziale $$P\bar 62m$$ , e dal politipo romboedrico γ con gruppo spazialeR3m.
    Abstract: Резюме Проводится подробное исследовние структурных изменений в кристаллах GaS и GaSe, используя метод дифракции сходящегося электронного пучка. Проведен анализ некоторых монокристаллов, выращенных из расплава, с номощью метода Бридгмана-Стокбаргера, из паровой фазы и с помощью химического метода переноса. Результаты наблпюдений с помощью электронной микрокопии показывают, что структура GaSe сильно зависит от метода выращивания. В кристаллах, выращенных из расплава, наблюдается только гексагональная β структура для GaS и для GaSe. Кристаллы, выращенные из паровой фазы, обнаруживают β структуру для GaS и суперпозицию гексагонального ε политипа и ромбоэдрического γ политипа для образцов GaSe. Для всех рассмотренных кристаллов проведена аккуратная оценка параметров решетки.
    Notes: Summary A detailed study of the structural modifications present in GaS and GaSe crystals has been performed by means of the convergent-beam electron diffraction technique. Several single crystals have been analysed, as grown both from the melt, by the Bridgmann-Stockbarger method, and from the vapour, by the iodine-assisted chemical transport method. The results of the electron microscopy observation show the structure of GaSe to be strongly dependent on the growth method. In the melt-grown crystals only the hexagonal β structure (space groupP63/mmc) has been observed for both GaS and GaSe. It has been confirmed by the related symmetry centre, evidenced in particular low symmetry orientation of the samples. The vapour-grown crystals show the same β structure for GaS and the superposition of the hexagonal ε polytype (space group $$P\bar 62m$$ ) and the rhombohedral γ polytype (space groupR3m) for GaSe samples. An accurate evaluation of the lattice parameters has been performed for all the analysed crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02459022
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  • 6
    Electronic Resource
    Electronic Resource
    Electron diffraction study of melt-grown InSe crystals (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 795-806 
    Details
    ISSN: 0392-6737
    Keywords: Electron determination of structures
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto È stata effettuata la diffrazione elettronica su cristalli di seleniuro di indio, clivati da lingotti cresciuti col metodo di Bridgman-Stoekbarger parterdo dagli elementi puri, presi sia in rapporto stechiometrico che in rapporti diversi. L’analisi delle figure di diffrazione ottenute in area selezionata ha permesso d’individuare la presenza di due politipi, i cui parametri reticolari sono stati calcolati. L’impilamento dei due politipi è stato osservato mediante le frange moiré.
    Abstract: Резюме Исследуется дифракция электронов на тонких кристалах InSe, выращенных из стехиометрического и нестехионетрического расплавов, с помощью метода Бридгмана-Стокбаргера. Анализ дифракдионных картин обнаруживаеет наличне двух фаз, для которых вычисляются параметры решетки. С помощью наблюдения муаровых полос исследуется поспедовательность группирования политипов.
    Notes: Summary Electron diffraction has been performed on thin crystals of indium selenide, cleaved from ingots grown from stoichiometric and nonstoichiometric melt by the Bridgman-Stockbarger method. The analysis of the selected area diffraction patterns has shown the presence of two phases, whose lattice parameters have been calculated. The stacking sequence of the polytypes has been observed through the moiré patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02453439
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  • 7
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of GaS x Se1−x Solid solutions (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1775-1781 
    Details
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Cristalli di GaS x Se1−x sono stati cresciuti dalla fase vapore, mediante trasporto chimico, usando I2 come agente trasportatore. Per l'intera serie di soluzioni solide, sono state eseguite misure di resistività, mobilità Hall e concentrazione dei portatori di carica a temperatura ambiente. Il comportamento di queste grandezze in funzione del parametrox è stato correlato alla dipendenza dallo stesso parametro delle costanti reticolari e della banda proibita di energia. L'analisi dei dati riportati mostra che le proprietà elettriche dipendono sia dalle caratteristiche strutturali dei cristalli, sia dalla incorporazione d'impurezze di iodio durante la crescita.
    Abstract: Резюме Выращиваются твердые растворы GaS x Se1−x из пара, используя метод переноса иода, причем содержане серыx изменяется скачками 0.1. Для полученных твердых растворов измеряются сопротивление, подвижности Холла и концентрации носителей, используя метод Ван дер Пау. Поведение этих величин в зависимости отx связано с зависимостью параметров решетки и ширины запрещенной зоны от химического состава, как было определено различными методами. Анализ полученных данных указывает, что электрические свойства твердых растворов GaS x Se1−x , выращенных из пара с иодом, определяются структурными характеристиками кристаллов, а также включением I2 во время выращивания.
    Notes: Summary GaS x Se1−x solid solutions are grown from the vapour by means of the I2-assisted transport method, varying the sulphur percentagex in steps of 0.1. Resistivity, Hall mobilities and carrier concentrations are measured at room temperature in the complete series of solid solutions by using the Van der Pauw method. Their behaviour as a function ofx is correlated to the dependence of the lattice parameters and of the energy gap on the chemical composition, as determined by various techniques. The analysis of the data reported here indicates that the electrical properties of GaS x Se1−x solid solutions grown from the vapour with iodine are determined both by the structural characteristics of the crystals and by the I2 incorporation during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457865
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  • 8
    Electronic Resource
    Electronic Resource
    Mineralogical applications of the lattice constant variance-covariance matrices (1979)
    Springer
    Mineralogy and petrology 26 (1979), S. 139-148 
    Details
    ISSN: 1438-1168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Description / Table of Contents: Zusammenfassung Varianz-Kovarianz-Matrizen der direkten und reziproken Gitterkonstanten können beim Fehlerfortpflanzungsgesetz benützt werden, um eine vollständige Auswertung der Fehlerausdrücke mineralogischer Größen, ausgedrückt durch Gitterkonstanten, zu erhalten. Eigenschaften und Beziehungen, welche diese beiden Matrizen gegenseitig verknüpfen, werden mit Betonung physikalischer Dimensionen diskutiert. Eine praktische Anwendung wird gegeben, indem die Fehlerausdrücke der strukturellen Indikatoren Δ(bc) und Δ(α*γ*) von alkalifeldspäten berechnet werden. Die Differenzen zwischen den Werten, die bei Benützung von Varianzen und Kovarianzen, bzw. nur von Varianzen erhalten wurden, sind sehr klein. Da aber die Berechnungen voll automatisiert sind, bietet die vollständige Formulierung mit Varianzen plus Kovarianzen eine brauchbare bessere Methode.
    Notes: Summary Direct and reciprocal lattice constant variance-covariance matrices when involved in the Law of Propagation of Errors can be used to gain a full evaluation of the error terms in mineralogical quantities expressed in terms of lattice constants. Properties and relationships which mutually connect the two matrices are discussed, with emphasis placed on physical dimensions. A practical application is given by calculating the error terms in the structural indicators Δ (bc) and Δ(α*γ*) of alkali feldspars. The differences between values obtained by using both variances plus covariances and those obtained using variances alone, are very small. However, as the calculations are completely automated, the full formulation using variances plus covariances represents a suitable better approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01081840
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  • 9
    Electronic Resource
    Electronic Resource
    Structural explanation for Δ (α*γ*) from α* vs. γ* in alkali feldspar (1978)
    Springer
    Mineralogy and petrology 25 (1978), S. 47-56 
    Details
    ISSN: 1438-1168
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Description / Table of Contents: Zusammenfassung Nach einem Vorschlag vonSmith (1968) und in Übereinstimmung mit den meisten seither publizierten Strukturdaten kann man in Alkalifeldspäten das α*/γ* zur Abschätzung von Δ(α*γ*), also des Unterschiedes im Al-Gehalt auf der 0- undm-Position benützen. Die vorliegende Arbeit untersucht das topologisch idente α/γ-Diagramm auf der Basis der Gestalt des Tetraederverbandes der Alkalifeldspäte. änderungen im Al-Gehalt derT-Position sind mit Änderungen im Kosinus von α und γ korreliert. Während der die cos γ-änderungen verursachende Al-Gesamtgehalt unmittelbar dem Unterschied im Al-Gehalt derO-undm-Position entspricht, ist der die cos α-Änderungen verursachende Al-Gesamtgehalt durch eine komplizierte Funktion ausgedrückt, die aber mit sehr guter Näherung drei Vierteln der Differenz im Al-Gehalt auf denm-und 0-Poisitionen entspricht. Diese quasi-Proportionalität und die Ersetzbarkeit des cos α/cos γ-Diagrammes durch das α/γ-Diagramm bei den Alkalifeldspäten stellen zwei Vereinfachungen bei der Berechnung des Al-Gehaltes dar.
    Notes: Summary As suggested bySmith (1968) and supported by most structural data published since, in alkali feldspar the α*γ* plot can be used for estimating Δ(α*γ*), i. e. the difference in Al confent between 0 andm subsites. The present study investigates the topologically identical αγ plot on the basis of the configuration of the alkali feldspar tetrahedral framework. Changes in Al content ofT-sites are functionally related to changes in cosines of α and γ. While the total Al causing changes in cos γ is directly equal to the difference in Al content between 0 andm subsites, the total Al causing changes in cos α is expressed by a complicated function which is equal with a very good approximation to three fourths of the difference in Al content betweenm and 0 subsites. This relation of quasiproportionality. like the feasible substitution in alkali feldspar of the diagram cos α vs. cos γ by the αγ plot, represents two simplifying assumptions which permit the difference in Al content to be calculated, as previously predicted.
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    URL: http://dx.doi.org/10.1007/BF01082203
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  • 10
    Electronic Resource
    Electronic Resource
    Search for the Jacobi shape transition in light nuclei (2003)
    Springer
    The European physical journal 20 (2003), S. 165-166 
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    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. The $\gamma$ -rays following the reaction 105 MeV 18 O + 28 Si have been measured using the EUROBALL IV, HECTOR and EUCLIDES arrays in order to investigate the predicted Jacobi shape transition. The high-energy $\gamma$ -ray spectrum from the GDR decay indicates the presence of large deformations in the hot 46Ti nucleus, in agreement with new theoretical calculations based on the rotating liquid-drop model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epja/i2002-10345-8
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