ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Excimer-Fluoreszenz von Polymeren mit aromatischen Substituenten. 1. Mitt. Abhängigkeit der Excimer-Bildung von der Polymerstruktur (1977)
    Springer
    Colloid & polymer science 255 (1977), S. 821-821 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01664549
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence as a Function of Aggregated Size from n-Butyl-Terminated Silicon Nanoclusters (2000)
    Springer
    Journal of cluster science 11 (2000), S. 423-431 
    Details
    ISSN: 1572-8862
    Keywords: silicon nanoparticles ; nanoclusters ; photoluminescence ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoluminescence (PL) from alkyl-terminated silicon nanocrystallites as a function of size has been studied. Ultraviolet–blue luminescence (390–410 nm) is observed from as-prepared silicon nanoclusters with diameters from 3 to 8 nm. After 1 h of annealing at 162°C in 2-methoxyethyl ether (diglyme), the λ max of PL shifts from 360 to 420 nm. High-resolution transmission electron microscopy (HRTEM) images show that individual silicon nanoparticles are fused to form pairs of nanoparticles. FTIR spectra show that the alkyl groups remain on the surface of silicon nanoparticles. As the temperature is raised to 250°C for 1 h, the PL no longer shows any peak in the visible light region. TEM images show that the silicon nanoparticles are aggregated and fused uniformly in one single dimension, to form a strip, and these strips parallel each other. When the temperature is raised to 350°C these silicon nanoparticles form a large piece of silicon textile network, showing that functionalized alkyl surface does not persist above this temperature. A strong Si–O–Si asymmetric stretching vibration appears between 1000 and 1100 cm−1 at the expense of the C–H vibrational modes and there is no more change after 3 h of annealing at 250 or 350°C. These results provide strong evidence that the PL originates from quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009099416195
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms of iron acquisition from siderophores by microorganisms and plants (1991)
    Springer
    Plant and soil 130 (1991), S. 179-198 
    Details
    ISSN: 1573-5036
    Keywords: chelate ; ecology ; membrane transport ; plant iron nutrition ; plant-microbial interactions ; rhizosphere
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Most bacteria, fungi, and some plants respond to Fe stress by the induction of high-affinity Fe transport systems that utilize biosyrthetic chelates called siderophores. To competitively acquire Fe, some microbes have transport systems that enable them to use other siderophore types in addition to their own. Bacteria such as Escherichia coli achieve this ability by using a combination of separate siderophore receptors and transporters, whereas other microbial species, such as Streptomyces pilosus, use a low specificity, high-affinity transport system that recognizes more than one siderophore type. By either strategy, such versatility may provide an advantage under Fe-limiting conditions; allowing use of siderophores produced at another organism's expense, or Fe acquisition from siderophores that could otherwise sequester Fe in an unavailable form. Plants that use microbial siderophores may also be more Fe efficient by virtue of their ability to use a variety of Fe sources under different soil conditions. Results of our research examining Fe transport by oat indicate parity in plant and microbial requirements for Fe and suggest that siderophores produced by root-colonizing microbes may provide Fe to plants that can use the predominant siderophore types. In conjunction with transport mechanisms, ecological and soil chemical factors can influence the efficacy of siderophores and phytosiderophores. A model presented here attempts to incorporate these factors to predict conditions that may govern competition for Fe in the plant rhizosphere. Possibly such competition has been a factor in the evolution of broad transport capabilities for different siderophores by microorganisms and plants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00011873
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Structural and chemical characteristics and oxidation behaviour of chromium-implanted single crystal silicon carbide (1995)
    Springer
    Journal of materials science 30 (1995), S. 2668-2674 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High-dose chromium implantation resulted in complex changes in the structure, chemistry, and oxidation behaviour of beta-type single-crystal silicon carbide. Detailed analytical studies indicated that, in addition to the primary process of surface doping, chromium implantation of silicon carbide to 3.90×1017 ions cm−2 at 200 keV was accompanied by many secondary processes such as surface sputtering, lattice damaging, and silicon depletion/carbon enrichment in the implanted region. These changes resulted in accelerated oxidation of the implanted samples by a factor of 1.14 as compared with the unimplanted crystals in 1 atm of flowing oxygen at 1100°C. The oxidation layer exhibited interesting structural and compositional inhomogeneity which could be explained based upon chromium mobility variation in the implanted region. The presence of densely populated chromium oxide precipitates in the outer region of the oxidation layer played a significant role in keeping the degree of oxidation acceleration low under the detrimental influence of lattice damages and silicon deletion/carbon enrichment. It was concluded that the potential of chromium implantation to improve the oxidation resistance of silicon carbide can be realized only when the implantation-induced secondary effects are suppressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00362150
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Small-scale crack blunting at a bimaterial interface with Coulomb friction (1991)
    Springer
    International journal of fracture 52 (1991), S. 293-306 
    Details
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The deformation field near the tip of a tensional crack impinging upon a normally loaded bimaterial frictional interface is studied. By allowing the two materials to slide with respect to each other along the interface the high stresses around the crack tip are relaxed. The region of slip as well as the stress distribution inside the slip zone is obtained as a function of the far field loading parameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00034085
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Alteration of oxidation behaviour of silicon carbide by aluminium implantation (1995)
    Springer
    Journal of materials science 14 (1995), S. 460-463 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00665902
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1991)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 15 (1991), S. 51-60 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Notes: Using the basic Boussinesq's equation, the expression for the vertical stress distribution (σz) underneath any point on the ground surface due to a general triangular loaded region in a preferred orientation with a linearly varied loading has been successfully derived. When the triangle is not in a preferred orientation, a simple axis transformation is required and the expression will be equally applicable. Based on this expression, σz due to an arbitrarily shaped loaded foundation can simply be determined by first triangulating the loaded area and summing up the contributions from each generated triangular region. The procedures for triangulating and calculating the stress distribution can be simply automated through computer programs.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610150105
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    A numerical model for wave scattering problems in infinite media due to p- and sv-wave incidences (1992)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 33 (1992), S. 1661-1682 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: Based on elastic wave motion theory and the superposition concept, a numerical model for wave scattering problems in infinite media due to P-wave and SV-wave incidences is presented in this paper. Since this model is based on a coupled system of finite and infinite elements for simulating wave propagation in infinite media, the complexity of geometry and the variability of material properties in the foundation can be realistically simulated. Through a systematic study of the characteristics of a plane harmonic P-wave and SV-wave incidences on a fixed boundary, the concept of stress increase factors and stress factors which can be used to calculate the generalized stresses on the wave input boundary due to the SV-wave and P-wave incidences is also proposed. The effects of incident wave mode, incident angle and Poisson's ratio in the foundation on the stress increase factors and the stress factors have been studied in detail. Finally, the proposed model has been applied to a half-plane foundation and a semi-circular canyon to calculate SV-wave and P-wave scattering problems. The numerical results obtained show good agreement with the theoretical results and Wong's analytical results.
    Additional Material: 18 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620330808
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Estimation of thermal stresses in the region with an eccentric hole by means of an analogy (1985)
    Springer
    Experimental mechanics 25 (1985), S. 251-254 
    Details
    ISSN: 1741-2765
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The analogy used to solve some thermoelastic problems is extended to include a region with an eccentric hole. The relation is shown to be a little more complicated in this case than in the one for the concentric hole. Three bending tests of an analogous thin plate are required. As an experimental proof, an eccentric circular region is considered and mental proof, an eccentric circular region is considered and the analogous thin plate is prepared. The heat-conduction equation is first solved to give the required temperature terms. The measured strains on the plate and the coefficients specified from the transverse loads and moments applied to the plate are combined effectively to get the estimated thermal stress. The experimentally estimated thermal stress of the region and the numerical result are shown to be in agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02325094
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Discussion on: Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 16 (1992), S. 377-381 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610160506
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...