ISSN:
1432-0630
Schlagwort(e):
77.20
;
79.20
;
85.30
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00897939
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