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  • Springer  (116)
  • American Institute of Physics (AIP)  (60)
  • 1985-1989  (176)
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  • 1
    Digitale Medien
    Digitale Medien
    Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3607-3609 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 1019–1020 cm−3 by the IR measurements, while a carrier concentration between 1010 and 1012 cm−3 was obtained by Hall measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336792
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  • 2
    Digitale Medien
    Digitale Medien
    Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 962-964 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Polyimide has been used as interlayer dielectric and passivation material. We studied the optical passivation property of polyimide by examining the spectral changes in the photoluminescence (PL) spectra of high-purity epitaxial GaAs coated with polyimide. Before full cure, the polyimide is nearly transparent to visible and near-infrared radiation. After full cure, the typical PL of GaAs was unobservable at liquid nitrogen or higher temperatures, but clear and distinct at liquid-helium temperature. The resolution of the GaAs exciton spectrum was improved in the coated sample. The polyimide-GaAs system also resulted in very weak luminescence extending over a wide spectral range from the red to near infrared.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340041
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  • 3
    Digitale Medien
    Digitale Medien
    Capture-emission process in double Poole–Frenkel well traps: Theory and experiments (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1042-1045 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The field-dependent capture-emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337395
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  • 4
    Digitale Medien
    Digitale Medien
    A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3781-3784 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An analytical method for quantitative interpretation of GaAs photoluminescence spectra was developed. Because of various transition mechanisms the photoluminescence spectrum of a sample may vary significantly under different measurement conditions. Based on a proposed scheme of transition priorities, spectra taken at various excitation powers were analyzed. Comparing results of undoped GaAs epitaxial layers grown by organometallic chemical vapor deposition under similar conditions but different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. Carbon and zinc were found to be the major shallow acceptors in most samples. At very low V/III ratios, carbon was the most dominant acceptor. The carbon concentration diminishes with an increasing ratio and the amount of zinc becomes more significant.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337543
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  • 5
    Digitale Medien
    Digitale Medien
    Electron paramagnetic resonance study on the p-type doping of copper indium disulfide by phosphorus implantation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5798-5800 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High doping efficiencies have been observed in phosphorus-implanted CuInS2 single crystals by pulsed electron-beam annealing, which could not be achieved by the conventional furnace annealing method. This paper presents the investigations by using the electron paramagnetic resonance measurement on this p-type doping effect. The electron paramagnetic resonance signal from the phosphorus interstitials was observed in the as-implanted crystals. The same signal appeared in the subsequently thermally annealed samples but disappeared in the pulsed electron beam annealed ones. This shows the superiority of melting crystal surfaces in the pulsed electron-beam annealing on eliminating the implantation-induced defects to obtain high doping efficiencies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343649
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  • 6
    Digitale Medien
    Digitale Medien
    Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2466-2469 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs and AlGaAs/GaAs multiple quantum wells (MQW) were selectively deposited on GaAs substrates patterned with native oxide, and photoluminescence (PL) characteristics of both the single crystal grown in open windows and the polycrystalline material deposited on the oxide masks were studied. Well-resolved distinct quantum-well (QW) transition peaks indicate no degradation of the epitaxial material quality in the small single-crystal areas. The PL of polycrystalline GaAs is very weak and the peak is centered around the near-band-edge transition energy of GaAs. Polycrystalline MQW structures exhibit much stronger PL signals, and the peak position shifts corresponding to the widths of the QWs grown. These results suggest that the quantum size effect is preserved in the polycrystalline material.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339455
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  • 7
    Digitale Medien
    Digitale Medien
    AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 120-125 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single and multiple quantum wells with well widths ranging from 10 to 135 A(ring) were grown by atmospheric pressure organometallic chemical vapor deposition and characterized by photoluminescence (PL) and electrical measurements. Compared with single layers of high-purity GaAs and AlGaAs which have high intensity near band-edge excitonic transitions, the quantum well (QW) structures exhibit very strong luminescence of the discrete QW eigenstates. The intense QW signals indicate that the carrier confinement efficiency of the wells is very high, which is also supported by significant mobility enhancement in the samples. The sharp PL lines suggest high quality and smoothness of the well interfaces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339170
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  • 8
    Digitale Medien
    Digitale Medien
    Measurement of ultrasound velocity in the spin-glass CuMn (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2074-2077 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ultrasound velocity measurements may be used to study the dynamics of the spin-glass phase. Near the transition temperature, the sound speed deviates slightly from that of the pure nonmagnetic host. We measured the velocity anomaly in a 1-at. % CuMn sample near the transition temperature (12 K) as a function of frequency from 5 to 100 MHz and found its size to be frequency independent. We also found changes in the anomaly when the sample was field cooled in transverse 4.7- and 14.2- kG fields. These results are discussed in light of previously published theoretical predictions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338947
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  • 9
    Digitale Medien
    Digitale Medien
    Effect of hydrogen chloride during oxidation of silicon on trap generation by avalanche electron injection (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1391-1398 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of HCl on trap generation in silicon dioxide layers at high electric fields are reported by comparing 700-A(ring), 200-A(ring), 9% HCl, and 0% HCl dry oxides stressed at constant avalanche electron injection currents and voltages. Experimental data indicate that HCl decreases the hydrogenation rate of boron acceptor in the silicon surface layer due to a high-density chlorine layer at the oxide/silicon interface but HCl increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related positively charged electron trap in the oxide is observed and isolated from the chlorine-independent negatively charged oxide hole trap. Chlorine also reduces the density of the smaller cross-section oxide electron trap which gives the turn-around phenomena.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337316
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  • 10
    Digitale Medien
    Digitale Medien
    Study of CuInS2 grown by the traveling-heater method by electrolyte electroreflectance (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2538-2540 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A study of the electrolyte electroreflectance spectra of CuInS2 grown by the traveling-heater method has been made. The energy gaps and broadening parameters were studied by varying the composition of the samples. Our results show that the energy gaps are in the range of 1.52 to 1.53 eV and have band-gap narrowing as the deviation from the stoichiometry increases, while the broadening parameters are in the range of 0.040 to 0.060 eV and found to be sensitive to the crystallization of the single crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337002
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