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  • Springer Nature  (314)
  • American Institute of Physics (AIP)  (90)
  • National Academy of Sciences  (67)
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  • 1
    Publication Date: 1965-10-01
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Springer Nature
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 3920-3925 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a clean preparation technique of doping alkali atoms in argon matrices, VUV emissions of the charge-transfer states of the ionic xenon–alkali excimers (XeA)+ have been measured. With synchrotron radiation as an excitation source, the ionic species were generated in the matrix and energy and time-resolved spectroscopy has been performed with synchrotron radiation as an excitation source. The emissions of the charge-transfer reaction: (Xe+A)→(XeA+)+hν have been observed for all ionic (XeA)+ excimers with energies in the VUV range between 6.05 and 7.4 eV. The excitation spectra revealed a primary formation process through direct ionization of the xenon; however, neutral xenon resonance states are also contributing. As obtained from lifetime measurements, the bands are assigned to the 0I−→0+ transition of the fine-structure components which account for the long decay time. An increase of the xenon concentration favors the formation of ionic trimers (Xe2A)+ whose emissions have also been identified. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variety of BeMgZnSe–ZnSe- as well as BeTe-based quantum-well structures has been fabri- cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates drasti- cally compared to ZnSe/GaAs. The valence-band offset between BeTe and ZnSe has been determined to be 0.9 eV (type II). Due to the high-lying valence band of BeTe, a BeTe–ZnSe pseudograding can be used for an efficient electrical contact between p-ZnSe and p-GaAs. BeMgZnSe quaternary thin-film structures have reproducibly been grown with high struc- tural quality, and rocking curve widths below 20 arcsec could be reached. Quantum-well structures show a high photoluminescence intensity even at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4368-4372 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the thermal stability of ZnSe-based single quantum well structures grown on a GaAs substrate by applying a rapid thermal annealing process. The photoluminescence intensity of the quantum well was used as a monitor for the thermal changes induced by the annealing process. X-ray diffractometry yields information about the crystal quality and the strain condition before and after the thermal treatment. As a main result, we found that the thermal stability of the quantum well photoluminescence signal critically depends on the thickness of the II–VI buffer layer, i.e., the distance between the active layer and the GaAs-II–VI heterointerface. For a buffer layer thickness of about 38 nm, the quantum well signal is totally quenched after a 1 min annealing step at 500 °C, while clear luminescence signals can be observed in samples with a 1 μm buffer even for a 750 °C process. Additionally, by comparing CdZnSe/ZnSe and ZnSe/ZnSSe quantum wells, we found that the Cd–Zn interdiffusion seems to be more efficient than the S–Se interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7718-7727 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3915-3920 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver and halogens, Br and Cl, were coimplanted into thin SiO2 films sandwiched on a field-effect structure. Compositional depth distribution and chemical states of the implants were measured by means of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Ion sensitivity of the surface layer was measured using a capacitive field-effect structure, electrolyte–insulator– semiconductor. Silver halides were found to be incorporated in SiO2 in addition to metallic silver. The distribution of the implanted silver sensitively responds to the reactive halogens subsequently implanted into a silver-containing surface. The solid phase of silver halides with a concentration of less than 10 at. % delivers a distinct ion sensing characteristic toward halide ions in an electrolyte solution, comparable to that of bulk material. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2788-2790 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of x-ray or neutron specular reflectance on the scattering density has been linearized by modifying the Born approximation. This makes it possible to analyze the reflectivity curves by the Fourier transform method by using the box refinement technique. Thus, the phases of the scattered waves are iteratively obtained, by which the scattering density profile in layered systems can be directly evaluated. The validity of these modifications is demonstrated by some numerical examples. The box refinement technique requires fewer constraints to obtain the physically realistic scattering density than the least-squares-fitting method does. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4482-4488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics and the photoresponse of metal-porous Si–p-type Si heterostructures have been studied. It is shown that the common interpretation of the current-voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal-porous Si interface, is wrong. An alternative explanation based on the electric-field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c-Si substrate at its interface to the porous Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 546-550 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Core level x-ray absorption and photoemission spectra of free water clusters are presented. Core and valence photoemission spectra show a weak but gradual change with cluster size. Comparisons to spectra of the isolated molecule and solid ice indicate that water molecules have a lower average coordination in clusters than in the bulk solid. X-ray absorption spectra reveal spectral characteristics between the free molecule and the bulk. These are compared to similar spectra of the isolated molecule and solid ice, and discussed in connection to calculated structures. © 1999 American Institute of Physics.
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