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  • 1
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 31 (1998), S. 570-573 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: High-resolution X-ray diffractometry is used to measure such parameters of heteroepitaxic III–V layers as the substrate miscut angle α, the relative lattice parameter perpendicular (Δa⊥/as) and parallel (Δa||/as) to the interface, and the epitaxic layer tilt angle β. X-ray multiple simultaneous diffraction is expected to provide more structural information and possibly to simplify the analysis. In this paper, a coplanar multiple diffraction system using Co Kα1 radiation, a monolithic beam conditioner, (004) and (115) simultaneous diffractions, and an oscillating slit is analysed. It is concluded that with this method two measurements are sufficient to obtain the values of (Δa⊥/as), (Δa||/as), the layer tilt angle β and the substrate miscut angle α. Moreover, the absolute value of the substrate lattice parameter can be obtained.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 1136-1139 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new approach to focusing X-ray optics based on asymmetric inclined (or rotated inclined) diffraction has been experimentally studied. Using a linear longitudinal W-groove cut into the surface of an asymmetric silicon (111) diffractor perpendicularly to the line of intersection of its surface and crystallographic (111) planes, the out-of-diffraction-plane (or sagittal) deviation of the X-ray diffracted beam has been measured for three angles of asymmetry and constant angle of inclination on BM5 at the ESRF for a wavelength of 0.1 nm. It has been demonstrated that in the grazing-emergence case the sagittal deviation increases with increasing asymmetry angle. A discrepancy with the theoretical value for the largest asymmetry angle and inhomogeneities in the contrast of the diffraction spot have been discussed.
    Type of Medium: Electronic Resource
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