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  • 1
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 1178-1180 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 11 (1978), S. 496-497 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The pathway of bacteriophage λ head formation has been well characterized in vivo and in vitro (Hohn, Katsura & Hohn, 1977). First a petit λ particle consisting of a shell protein pE, a protein pNu3 and minor proteins, but lacking DNA, is formed. The pNu3-containing structure is then converted to a structure which does not contain pNu3, and which is capable of taking up and cutting the viral DNA. The purpose of this work is to determine the scaffold structure, formed by pNu3, by small-angle scattering techniques based on the known physico-chemical properties of pNu3-containing and pNu3-lacking particles (Künzler & Hohn, 1978). The scaffold is found to be inside the protein shell but less concentrated than the 130 Å radius core reported from electron micrographs.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 19 (1986), S. 34-38 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The convolution of the various contributions to X-ray intensity distribution curves measured in lattice-parameter determination leads to peak shifts and, hence, to systematic errors in the case that at least one of the contributing curves is asymmetric. For perfect crystals, depending on the collimator divergence, this effect may reach the order of magnitude of the refraction correction. It is caused by the asymmetry of the spectral distribution curve, which includes intrinsic asymmetry, dispersion and angle dependence of intensity (ADI). For imperfect crystals characterized by orientation and interplanar-spacing distributions, the distribution curves should be measured in order to correct accurately the peak shift. Examples of simulation calculations are given for Si, Cu Kα1, Bond method for various reflections of perfect crystals and for crystals having orientation distributions, 444 reflection.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 532-538 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The structures of superlattices on misoriented (001) substrates are described by means of two modified models. From both models, it can be concluded that there is an intensity distribution rod in the reciprocal space perpendicular to the surface and the symmetry of the diffraction pattern is reduced from tetragonal to monoclinic. However, in the first model the diffraction pattern near the substrate reflections and in the second model that near the so-called `average lattice' reflections remains tetragonal. Neglection of both of these facts can cause systematic errors in the determination of the lattice parameters of superlattices. These errors are estimated. Additionally, 60° misfit dislocations are discussed as a reason for the tilt of the layer system with respect to the substrate. The validity of the theoretical predictions was proved by X-ray diffraction studies on symmetric and asymmetric reflections on three GaAs/Ga1 − xInxAs superlattices grown on (001) GaAs. The first sample has a large misorientation and the diffraction behaviour corresponds to the above-mentioned models. The second sample shows a diffraction pattern that can be explained by a tilt of the layer system in relation to the substrate. The third sample has a large misorientation and a large tilt of the layer system and so its diffraction pattern shows an overlap of both effects.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 17 (1984), S. 451-455 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A method for precise measurement of diffraction angles of single crystals using a Soller slit is described, which needs only a single diffracting position of the sample. The method can be applied to imperfect crystals, to samples with arbitrary shape as well as to measurements integrating over a larger area. The instrument and the measuring procedure are described. A survey of systematic errors is given and the errors that are specific for the method are briefly discussed. As an example, the results of measurements on silicon with a standard deviation of 3 p.p.m. are communicated.
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  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 18 (1985), S. 365-365 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: In the paper by Berger [J. Appl. Cryst. (1984), 17, 451–455] two errors have occurred. The formulae for the vertical divergence error Δθd on page 453, left-hand column, should read: \Delta \theta _{d} = {{1}\over{2}} {\rm tan} \theta {{ \int\limits^F_{-F} \int\limits^P_{-P} \delta ^{2}{\rm d}p {\rm d}f}\over{\int\limits^F _{-F} \int\limits^P_{-P} {\rm d}p {\rm d}f}}with \delta = (p - f)/s,and thus \Delta \theta _{d} = {{1}\over{6}} {\rm tan} \theta(P^{2} + F^{2})/s^{2}. \eqno (3)
    Type of Medium: Electronic Resource
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